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机译:化学计量和无序度对PbBi_2Te_(4-x)Se_x拓扑绝缘子的电子结构的影响
Tomsk State University, Tomsk 634050, Russia ,St. Petersburg State University, Saint Petersburg 198504, Russia;
St. Petersburg State University, Saint Petersburg 198504, Russia;
Azerbaijan State Oil and Industry University, AZ1010 Baku, Azerbaijan ,Institute of Physics, ANAS, AZ1143 Baku, Azerbaijan;
Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143 Baku, Azerbaijan;
Helmholtz-Zentrum Berlin fur Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin, Germany;
Helmholtz-Zentrum Berlin fur Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin, Germany;
St. Petersburg State University, Saint Petersburg 198504, Russia;
Donostia International Physics Center (DIPC), 20018 San Sebastidn/Donostia, Basque Country, Spain ,Departamento de Fisica de Materiales UPV/EHU, Centre de Fisica de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU,20080 San Sebastidn/Donostia, Basque Country, Spain,Tomsk State University, Tomsk 634050, Russia ,St. Petersburg State University, Saint Petersburg 198504, Russia;
机译:化学计量和病症对PBBI2TE_(4-X)SE_X拓扑绝缘体的电子结构的影响
机译:不同化学计量组合物三维拓扑绝缘子的电子带结构
机译:不同化学计量组合物三维拓扑绝缘子的电子带结构
机译:角度分辨的光曝光光谱研究在磁杂质存在下拓扑绝缘子Bi_2se_3的电子带结构
机译:结构和电子无序对拓扑绝缘体Sb2Te3薄膜的影响
机译:拓扑绝缘体Bi2Se3中出色的表面和整体电子结构
机译:三元拓扑绝缘子中的双极表面传导 Bi_2(Te_ {1-x} se_x)_3纳米带