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Electronic structure of YFe_2Ge_2 studied by angle-resolved photoemission spectroscopy

机译:角度分辨光发射光谱法研究YFe_2Ge_2的电子结构

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摘要

We report an angle-resolved photoemission spectroscopy study of a ThCr_2Si_2-type superconductor YFe_2Ge_2 (T_c ≈ 1.8 K) in the normal state. The resolved low-energy band structure mainly consists of several flat Fe bands, while the renormalization factors of different bands range from 1.7 to 2.8. Around the Fermi level, these bands contribute to a high density of states, which may account for the unusually high Sommerfeld coefficient γ. Besides, a 30 meV kink is observed, which is probably induced by electron-phonon interactions. Our results indicate that YFe_2Ge_2 is a moderately correlated compound, while electron-phonon coupling should be taken into account to better understand its properties.
机译:我们报告在正常状态下ThCr_2Si_2型超导体YFe_2Ge_2(T_c≈1.8 K)的角度分辨光发射光谱研究。解析的低能带结构主要由几个平坦的Fe带组成,而不同能带的重归一化因子范围为1.7至2.8。在费米能级附近,这些谱带有助于形成高态密度,这可能解释了异常高的索默费尔德系数γ。此外,观察到30 meV的扭结,这可能是由电子-声子相互作用引起的。我们的结果表明,YFe_2Ge_2是一种中等相关的化合物,而应考虑电子-声子耦合以更好地了解其性质。

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  • 来源
    《Physical review》 |2016年第2期|024506.1-024506.5|共5页
  • 作者单位

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China,Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China,Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China,CAS-Shanghai Science Research Center, Shanghai 201203, China;

    National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing 210093, China;

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China,Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China,Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China;

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China,Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China,Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China;

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China;

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China;

    Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom;

    Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom;

    Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom;

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China,Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China;

    National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing 210093, China;

    State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China,Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China,Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China;

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