Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate

Feng-Chuan Chuang; Chia-Hsiu Hsu; Hsin-Lei Chou; Christian P. Crisostomo; Zhi-Quan Huang; Shih-Yu Wu; Chien-Cheng Kuo; Wang-Chi V. Yeh; Hsin Lin; Arun Bansil

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Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate

机译：通过在Au / Si（111）衬底上形成表面合金来预测二维拓扑绝缘体

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Two-dimensional (2D) topological insulators (TIs), which can be integrated into the modern silicon industry, are highly desirable for spintronics applications. Here, using first-principles electronic structure calculations, we show that the Au/Si(111)-3~(1/2) substrate can provide a platform for hosting 2D TIs obtained through the formation of surface alloys with a honeycomb pattern of adsorbed atoms. We systematically examined elements from groups Ⅲ to Ⅵ of the periodic table at 2/3 monolayer coverage on Au/Si(111)-3~(1/2), and found that In, T1, Ge, and Sn adsorbates result in topologically nontrivial phases with band gaps varying from 0 to 50 meV. Our scanning tunneling microscopy and low-energy electron diffraction experiments confirm the presence of the honeycomb pattern when Bi atoms are deposited on Au/Si(111)-V3, in accord with our theoretical predictions. Our findings pave the way for using surface alloys as a potential route for obtaining viable 2D TI platforms.

机译：可以集成到现代硅产业中的二维（2D）拓扑绝缘体（TI）是自旋电子学应用的极高需求。在这里，使用第一性原理电子结构计算，我们显示Au / Si（111）-3〜（1/2）衬底可以提供一个平台，用于承载通过形成具有吸附的蜂窝状图案的表面合金而获得的2D TI。原子。我们对Au / Si（111）-3〜（1/2）上2/3单层覆盖的元素周期表中Ⅲ至Ⅵ族元素进行了系统的研究，发现In，T1，Ge和Sn吸附物的拓扑结构带隙范围从0到50 meV的非平凡相位。我们的扫描隧道显微镜和低能电子衍射实验证实，当Bi原子沉积在Au / Si（111）-V3上时，符合我们的理论预测，蜂窝状结构的存在。我们的发现为使用表面合金作为获得可行的2D TI平台的潜在途径铺平了道路。

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《Physical review》 |2016年第3期|035429.1-035429.5|共5页
作者
Feng-Chuan Chuang; Chia-Hsiu Hsu; Hsin-Lei Chou; Christian P. Crisostomo; Zhi-Quan Huang; Shih-Yu Wu; Chien-Cheng Kuo; Wang-Chi V. Yeh; Hsin Lin; Arun Bansil;
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Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan;

Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore and Department of Physics, National University of Singapore, Singapore 117542, Singapore;

Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA;

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1. Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate [J] . Chuang Feng-Chuan, Hsu Chia-Hsiu, Chou Hsin-Lei, Physical review, B . 2016,第3期

机译：通过在Au / Si（111）衬底上形成表面合金来预测二维拓扑绝缘体
2. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate [J] . Liang-Zi Yao, Christian P. Crisostomo, Chun-Chen Yeh, Scientific reports. . 2015,第1期

机译：Si（111）衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
3. First-Principles Calculations of van der Waals and Spin Orbit Effects on the Two-Dimensional Topological Insulator Stanene and Stanene on Ge(111) Substrate [J] . El Bachra M., Zaari H., Benyoussef A., Journal of Superconductivity and Novel Magnetism . 2018,第8期

机译：在GE（111）衬底上的二维拓扑绝缘体苯二烯和苯二甲酸纤维和旋转轨道效应的van der waals和旋转轨道效应的第一原理计算
4. Surface-Normal Structure of Te and Cd UPD Layer Formed on an Au(111) Substrate Analyzed by Specular X-ray Reflectivity [C] . H.Kawamura, M.Takahasi, J.Mizuki The Meeting of the Electrochemical Society . 2003

机译：通过镜面X射线反射率分析的Au（111）基板上形成的TE和CD更新层的表面正常结构
5. Exotic surface states of topological insulators and topological superconductors - quasiparticle scattering in the surface of 3d topological insulators and realization of majorana fermions. [D] . Zhou, Xiaoting. 2013

机译：拓扑绝缘子和拓扑超导体的外来表面状态-3d拓扑绝缘子表面中的准粒子散射和马约拉那费米子的实现。
6. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate [O] . Liang-Zi Yao, Christian P. Crisostomo, Chun-Chen Yeh, -1

机译：Si（111）衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
7. Two-dimensional quantum transport of multivalley (111) surface state in topological crystalline insulator SnTe thin films [O] . Akiyama, Ryota, Fujisawa, Kazuki, Yamaguchi, Tomonari, 2015

机译：二维量子迁移的多元（111）表面态拓扑结晶绝缘体snTe薄膜
8. Electric Field Induced Phase Transitions in Scanning Tunneling MicroscopyExperiments on Au(111) Surfaces. (Reannouncement with New Availability Information) [R] . Schott, J. H., White, H. S. 1992

机译：au（111）表面扫描隧道显微镜中的电场诱导相变实验。（重新公布新的可用性信息）

Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate

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