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Gate-induced gap in bilayer graphene suppressed by Coulomb repulsion

机译：库仑斥力抑制双层石墨烯中的栅诱导间隙

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摘要

We investigate the effect of on-site Coulomb repulsion U on the band gap of the electrically gated bilayer graphene by employing coherent potential approximation in the paramagnetic state, based on an ionic two-layer Hubbard model. We find that, while either the on-site Coulomb repulsion U or the external perpendicular electric field E alone will favor a gapped state in the bilayer graphene, competition between them will surprisingly lead to a suppression of the gap amplitude. Our results can be applied to understand the discrepancies of gap size reported from optical and transport measurements, as well as the puzzling features observed in angular resolved photoemission spectroscopic study.
机译：我们基于离子两层Hubbard模型，通过在顺磁状态下采用相干势近似，研究了现场库仑排斥U对电控双层石墨烯带隙的影响。我们发现，无论是现场库仑排斥U还是外部垂直电场E都将促进双层石墨烯中的带隙状态，但它们之间的竞争会令人惊讶地导致间隙幅度的抑制。我们的结果可用于理解从光学和传输测量报告的间隙尺寸差异，以及在角度分辨光发射光谱研究中观察到的令人费解的特征。

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  • 来源
    《Physical review》 |2016年第3期|035109.1-035109.7|共7页
  • 作者

    Jin-Rong Xu; Ze-Yi Song; Hai-Qing Lin; Yu-Zhong Zhang;

  • 作者单位

    Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China, School of Mathematics and Physics, Anhui Jianzhu University, Hefei, Anhui 230601, People's Republic of China;

    Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China;

    Beijing Computational Science Research Center, Beijing 100084, People's Republic of China;

    Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China, Beijing Computational Science Research Center, Beijing 100084, People's Republic of China;

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