Spilling of electronic states in Pb quantum wells

M. Jalochowski; K. Palotas; M. Krawiec

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Spilling of electronic states in Pb quantum wells

机译：铅量子阱中电子态的溢出

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Energy-dependent apparent step heights of two-dimensional ultrathin Pb islands grown on the Si(111)6 × 6-Au surface have been investigated by a combination of scanning tunneling microscopy, first-principles density-functional theory, and the particle-in-a-box model calculations. The apparent step height shows the thickness-and energy-dependent oscillatory behaviors, which are directly related to the spilling of electron states into the vacuum exhibiting a quantum size effect. This has been unambiguously proven by extensive first-principles scanning tunneling microscopy and spectroscopy simulations. An electronic contribution to the apparent step height is directly determined. At certain energies it reaches values as high as a half of the atomic contribution. The applicability of the particle-in-a-box model to the spilling of electron states is also discussed.

机译：通过扫描隧道显微镜，第一性原理密度泛函理论和粒子注入技术的研究，研究了在Si（111）6×6-Au表面上生长的二维超薄Pb岛的能量依赖性表观台阶高度。盒模型计算。表观台阶高度显示出与厚度和能量有关的振荡行为，这与电子态向真空中的溢出直接相关，从而表现出量子尺寸效应。广泛的第一性原理扫描隧道显微镜和光谱模拟已明确证明了这一点。直接确定视在台阶高度的电子贡献。在某些能量下，它的值高达原子贡献的一半。还讨论了“盒中粒子”模型对电子态溢出的适用性。

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《Physical review》 |2016年第3期|035437.1-035437.6|共6页
作者
M. Jalochowski; K. Palotas; M. Krawiec;
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Institute of Physics, M. Curie-Sktodowska University, Pl. M. Curie-Sktodowskiej 1, 20-031 Lublin, Poland;

Department of Theoretical Physics, Budapest University of Technology and Economics, Budafoki ut 8., H-1111 Budapest, Hungary;

Institute of Physics, M. Curie-Sktodowska University, Pl. M. Curie-Sktodowskiej 1, 20-031 Lublin, Poland;

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1. Spilling of electronic states in Pb quantum wells [J] . Jalochowski M., Palotas K., Krawiec M. Physical review, B . 2016,第3期

机译：铅量子阱中电子态的溢出
2. Effect of band anisotropy on electronic structure of PbS, PbSe, and PbTe quantum dots [J] . Tudury GE., Ferreira LG., Barbosa LC., Physical Review, B. Condensed Matter . 2000,第11期

机译：能带各向异性对PbS，PbSe和PbTe量子点电子结构的影响
3. Effect of band anisotropy on electronic structure of PbS, PbSe, and PbTe quantum dots [J] . Tudury GE., Ferreira LG., Barbosa LC., Physical Review, B. Condensed Matter . 2000,第11期

机译：能带各向异性对PbS，PbSe和PbTe量子点电子结构的影响
4. Electronic states of elongated PbSe/PbS Core/shell quantum dots [C] . T Walsh, J Miloszewski, U Aeberhard, Workshop on Theory, Modelling and Computational Methods for Semiconductors . 2014

机译：细长PBSE / PBS核心/壳料圆点的电子状态
5. Cation exchange in PbS quantum dots: Kinetics of Cd exchange and effects on electronic properties [D] . Mainali, Badri Prasad. 2015

机译：PbS量子点中的阳离子交换：Cd交换动力学及其对电子性质的影响
6. Electronic and Optical Properties of Ultrasmall ABX3 (A= Cs CH3NH3/B = Ge Pb Sn CaSr/X = Cl Br I) Perovskite Quantum Dots [O] . Athanasios Koliogiorgos, Christos S. Garoufalis, *, 2018

机译：超小型ABX3（A= CsCH3NH3 / B = GePbSnCaSr / X = ClBrI）钙钛矿量子点
7. Spilling of electronic states in Pb Quantum Wells [O] . Jalochowski, M., Palotas, K., Krawiec, M. 2016

机译：pb量子阱中电子态的溢出

Spilling of electronic states in Pb quantum wells

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