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Coherent dynamics of exciton orbital angular momentum transferred by optical vortex pulses

机译:光涡旋脉冲传递的激子轨道角动量的相干动力学

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摘要

The coherent dynamics of the exciton center-of-mass motion in bulk GaN are studied using degenerate four-wave-mixing (FWM) spectroscopy with Laguerre-Gaussian (LG) mode pulses. We evaluate the exciton orbital angular momentum (OAM) dynamics from the degree of OAM, which is derived from the distributions of OAM (topological charge) of the FWM signals. When excitons are excited with two single-mode LG pulses, the exciton OAM decay time significantly exceeds the exciton dephasing time, which can be attributed to high uniformity of the exciton dephasing in our bulk sample because the decoherence of the exciton OAM is governed by the angular variation in the exciton dephasing. We also analyze the topological charge (ℓ) dependence of the OAM decay using a multiple-mode LG pump pulse, which allows us to simultaneously observe the dynamics of the exciton OAM for different ℓ values under the same excitation conditions. The OAM decay times of the ℓ = 1 component are usually longer than those of the ℓ = 0 component. The ℓ-dependent OAM decay is supported by a phenomenological model which takes into account the local nonuniformity of the exciton dephasing.
机译:使用简并四波混合(FWM)光谱和Laguerre-Gaussian(LG)模式脉冲,研究了整体GaN中激子质心运动的相干动力学。我们从OAM的程度评估激子轨道角动量(OAM)动力学,OAM的程度是从FWM信号的OAM(拓扑电荷)的分布得出的。当激子被两个单模LG脉冲激发时,激子OAM的衰减时间大大超过了激子相移的时间,这可以归因于我们整体样品中激子相移的高度均匀性,因为激子OAM的去相干性受激子控制。激子相移的角度变化。我们还使用多模式LG泵浦脉冲分析了OAM衰减的拓扑电荷(ℓ)依赖性,这使我们能够在相同的激发条件下,同时观察不同ℓ值的激子OAM的动力学。 ℓ= 1分量的OAM衰减时间通常长于the = 0分量的OAM衰减时间。依赖于O的OAM衰减由一种现象模型来支持,该模型考虑了激子相移的局部不均匀性。

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  • 来源
    《Physical review》 |2016年第4期|045205.1-045205.8|共8页
  • 作者单位

    Department of Applied Physics, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo 060-8628, Japan;

    Department of Applied Physics, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo 060-8628, Japan;

    Department of Applied Physics, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo 060-8628, Japan;

    Department of Applied Physics, Hokkaido University, Kita-13, Nishi-8, Kita-ku, Sapporo 060-8628, Japan;

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