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Interfacial thermal conductance across metal-insulator/semiconductor interfaces due to surface states

机译:由于表面状态,跨金属-绝缘体/半导体界面的界面导热

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摘要

We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev. Lett. 68, 1563 (1992)] and most recently by Hohensee et al. [Nat. Commun. 6,6578(2015)].
机译:我们指出,金属-绝缘体/半导体界面的界面热导的有效通道(Kapitza电阻的倒数)受界面附近薄区域内允许的表面态介导的电子-声子相互作用的控制。我们的详细计算表明,在这些金属中,Pb / Pt / Al / Au-金刚石界面上的界面导热仅略有不同,并且很好地再现了Stoner等人观察到的金属-金刚石界面上的界面导热的实验结果。 [物理牧师68,1563(1992)],最近由Hohensee等人撰写。 [Nat。公社6,6578(2015)]。

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  • 来源
    《Physical review》 |2016年第8期|085433.1-085433.7|共7页
  • 作者单位

    Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China;

    Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China;

    Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China,Hokkaido University, Sapporo 060-0826, Japan;

    Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, USA,Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80309, USA;

    Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, USA;

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