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Characterization of the local charge environment of a single quantum dot via resonance fluorescence

机译:通过共振荧光表征单个量子点的局部电荷环境

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We study the photon-statistical behavior of resonance fluorescence from self-assembled InAs quantum dots (QDs) as a function of the density of free charge carriers introduced by an above band-gap laser. Second-order correlation measurements show bunching behavior that changes with above-band laser power and is absent in purely above-band excited emission. Resonant photoluminescence excitation spectra indicate that the QD experiences discrete spectral shifts and continuous drift due to changes in the local charge environment. These spectral changes, combined with the tunneling of charges from the environment to the QD, provide an explanation of the bunching observed in the correlations.
机译:我们研究了自组装InAs量子点(QDs)共振荧光的光子统计行为,它是由上述带隙激光器引入的自由电荷载流子密度的函数。二阶相关性测量显示,聚束行为随带上激光功率而变化,而在纯带上激发发射中则不存在。共振光致发光激发光谱表明,由于局部电荷环境的变化,量子点经历了离散的光谱漂移和连续漂移。这些光谱变化,加上从环境到QD的电荷隧穿,提供了在相关性中观察到的聚束的解释。

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  • 来源
    《Physical review》 |2016年第11期|115307.1-115307.9|共9页
  • 作者单位

    Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, USA;

    Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, USA;

    Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, USA;

    Joint Quantum Institute, National Institute of Standards and Technology, & University of Maryland, Gaithersburg, Maryland 20899, USA;

    Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, USA;

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