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首页> 外文期刊>Physical review >Perfect inverse spin Hall effect and inverse Edelstein effect due to helical spin-momentum locking in topological surface states
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Perfect inverse spin Hall effect and inverse Edelstein effect due to helical spin-momentum locking in topological surface states

机译：由于螺旋自旋动量锁定在拓扑表面状态中，因此具有完美的逆自旋霍尔效应和逆爱德斯坦效应

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摘要

We present a theory for the inverse spin Hall effect in a thin film of topological insulator (TI) Bi_2Se_3, connected to a reservoir with applied spin bias, in the ballistic regime. In the case that either the spin polarization of the spin bias is along the longitudinal direction, or the hybridization gap A of the surface states vanishes, the spin Hall angle Θsh tends to infinity, indicating that the spin bias is perfectly converted into a measurable transverse charge current, essentially without generating a longitudinal spin current in the TI. In other cases, with increasing the Fermi energy E_F from the bottom of the conduction band of surface states, ΘSh grows continuously from zero and exhibits an interesting linear dependence on E_F/Δ for E_F＞＞ Δ. We also find that the inverse Edelstein effect occurs, when the in-plane transverse component of the spin polarization vector is nonzero. The spin-to-charge conversion becomes complete, when the spin polarization vector is along the transverse direction, or the hybridization gap Δ vanishes.
机译：我们提出了一种在弹道状态下将拓扑绝缘体（TI）Bi_2Se_3薄膜连接到具有自旋偏压的储层的薄膜中的逆自旋霍尔效应的理论。在自旋偏压的自旋极化沿纵向方向或表面状态的杂化间隙A消失的情况下，自旋霍尔角θsh趋于无穷大，表明自旋偏压已完美地转换为可测量的横向充电电流，基本上不会在TI中产生纵向自旋电流。在其他情况下，随着费米能量E_F从表面态导带的底部增加，ΘSh从零开始连续增长，并且对于E_F ＞＞Δ表现出有趣的线性依赖关系。我们还发现，当自旋极化矢量的面内横向分量为非零时，就会发生逆爱德斯坦效应。当自旋极化矢量沿横向方向旋转或杂化间隔Δ消失时，自旋至电荷转换完成。

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  • 来源
    《Physical review》 |2016年第11期|115118.1-115118.6|共6页
  • 作者

    Wei Luo; W. Y. Deng; Hao Geng; M. N. Chen; R. Shen; L. Sheng; D. Y. Xing;

  • 作者单位

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;

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