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首页> 外文期刊>Physical review >Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect
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Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

机译：用于电流驱动磁畴壁运动的自旋霍尔效应感应转矩的增强：内界面效应

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摘要

We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ～15MA/cm~2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ～26 MA/cm~2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.
机译：我们研究具有结构反转不对称和不同分层结构的垂直磁化Tb / Co导线中电流感应的畴壁运动。我们发现驱动畴壁运动的临界电流密度强烈取决于分层结构。对于具有较薄的Co子层和更多的内部Tb / Co界面的导线，最低的临界电流密度约为15MA / cm〜2，畴壁速度曲线的斜率最大，而最大的临界电流密度约为26MA / cm〜2在Tb-Co合金磁力线上观察到驱动畴壁所需的能量。发现Co / Tb界面对Dzyaloshinskii-Moriya相互作用的贡献微不足道，而有效的自旋轨道转矩强烈取决于Tb / Co内部界面的数量（n）。 Tb稀土杂质引起的偏斜散射引起的外在自旋霍尔效应增强了抗阻尼扭矩，从而说明了电流引起的畴壁运动的高效率。

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  • 来源
    《Physical review》 |2016年第17期|174424.1-174424.7|共7页
  • 作者

    Do Bang; Jiawei Yu; Xuepeng Qiu; Yi Wang; Hiroyuki Awano; Aurelien Manchon; Hyunsoo Yang;

  • 作者单位

    Toyota Technological Institute, Tempaku, Nagoya 468-8511, Japan,Institute of Material Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Ha Noi, Vietnam;

    Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore;

    Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore;

    Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore;

    Toyota Technological Institute, Tempaku, Nagoya 468-8511, Japan;

    Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia;

    Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore;

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