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Conductance oscillations in quantum point contacts of InAs/GaSb heterostructures

机译：InAs / GaSb异质结构的量子点接触中的电导振荡

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摘要

We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an oscillatory decay as a function of the distance to the edge. This is in contrast to the behavior of the edge states in HgTe quantum wells, which decay into the bulk in a simple exponential manner. The difference between the two materials is brought about by spatial separation of electrons and holes in InAs/GaSb, which affects the magnitudes of the parameters describing the particle-hole asymmetry and the strength of intersubband coupling within the Bernevig-Hughes-Zhang model. We show that the character of the wave-function decay impacts directly the dependence of the point contact conductance on the constriction width and the Fermi energy, which can be verified experimentally and serves to accurately determine the values of the relevant parameters. In the case of InAs/GaSb heterostructures, the conductance magnitude oscillates as a function of the constriction width following the oscillations of the edge state penetration, whereas in HgTe/(Hg,Cd)Te quantum wells a single switching from transmitting to reflecting contact is predicted.
机译：我们通过量子传输模拟InAs / GaSb异质结构和HgTe /（Hg，Cd）Te量子阱，研究了二维拓扑绝缘体中的量子点接触。在InAs / GaSb中，边缘状态的密度显示出振荡衰减，该衰减是到边缘的距离的函数。这与HgTe量子阱中边缘态的行为形成对比，后者以简单的指数方式衰减为主体。两种材料之间的差异是由InAs / GaSb中电子和空穴的空间分隔引起的，这影响了描述粒子-空穴不对称性的参数的大小以及Bernevig-Hughes-Zhang模型中子带间耦合的强度。我们表明，波函数衰减的特性直接影响点接触电导对收缩宽度和费米能量的依赖性，这可以通过实验进行验证，并可以准确地确定相关参数的值。在InAs / GaSb异质结构的情况下，电导幅度随边缘态穿透的振荡而随收缩宽度的变化而振荡，而在HgTe /（Hg，Cd）Te量子阱中，从透射接触到反射接触的单个转换是预料到的。

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  • 来源
    《Physical review》 |2016年第19期|195305.1-195305.7|共7页
  • 作者

    Michal Papaj; Lukasz Cywinski; Jerzy Wrobel; Tomasz Dietl;

  • 作者单位

    Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, ulica Pasteura 5, PL-02-093 Warszawa, Poland,Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;

    Institute of Physics, Polish Academy of Sciences, aleja Lotnikow 32/46, PL-02-668 Warszawa, Poland;

    Institute of Physics, Polish Academy of Sciences, aleja Lotnikow 32/46, PL-02-668 Warszawa, Poland,Faculty of Mathematics and Natural Sciences, Rzeszow University, aleja Rejtana 16A, PL-35-959 Rzeszow, Poland;

    Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, ulica Pasteura 5, PL-02-093 Warszawa, Poland,Institute of Physics, Polish Academy of Sciences, aleja Lotnikow 32/46, PL-02-668 Warszawa, Poland,WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

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