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Weak (anti)localization in tubular semiconductor nanowires with spin-orbit coupling

机译:具有自旋轨道耦合的管状半导体纳米线的弱(反)定位

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摘要

We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc-blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare wires of standard growth directions <100>, <111>, and <110>. The motion on the quasi-two-dimensional surface is considered diffusive in both directions: transversal as well as along the cylinder axis. It is shown that Dresselhaus and Rashba SOC similarly affect the spin relaxation rates. For the <110> growth direction, the long-lived spin states are of helical nature. We detect a crossover from weak localization to weak antilocalization depending on spin-orbit coupling strength as well as dephasing and scattering rate. The theory is fitted to experimental data of an undoped <111> InAs nanowire device which exhibits a top-gate-controlled crossover from positive to negative magnetoconductivity. Thereby, we extract transport parameters where we quantify the distinct types of SOC individually.
机译:我们分析性地计算了闪锌矿型管状半导体系统中电子对Drude电导率的弱(反)定位校正。我们包括线性Rashba和Dresselhaus自旋轨道耦合(SOC),并比较标准生长方向<100>,<111>和<110>的导线。准二维表面上的运动被认为在两个方向上都是扩散的:横向以及沿着圆柱轴。结果表明,Dresselhaus和Rashba SOC同样影响自旋弛豫率。对于<110>的生长方向,长寿命的自旋态具有螺旋性质。我们根据自旋轨道耦合强度以及移相和散射速率检测出从弱定位到弱反定位的交叉。该理论适合未掺杂的<111> InAs纳米线器件的实验数据,该器件表现出从正磁导率到负磁导率的顶栅控制交叉。因此,我们提取了传输参数,在其中我们分别量化了不同类型的SOC。

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  • 来源
    《Physical review》 |2016年第20期|205306.1-205306.15|共15页
  • 作者单位

    Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany;

    Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany;

    Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany;

    Peter Gruenberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, 52425 Juelich, Germany;

    Peter Gruenberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, 52425 Juelich, Germany;

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