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首页> 外文期刊>Physical review >Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In_xGa_(1-x)N/GaN quantum wells
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Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In_xGa_(1-x)N/GaN quantum wells

机译：非均匀加宽对高倾斜半极性和非极性In_xGa_（1-x）N / GaN量子阱的光偏振的影响

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摘要

We investigate the influence of inhomogeneous broadening on the optical polarization properties of high-inclination semipolar and nonpolar In_xGa_(1-x)N/GaN quantum wells. Different planar m-plane and (2021) samples were grown (including core-shell microrods) and have been characterized by excitation-dependent polarization-resolved confocal micro-photoluminescence. The measured degree of linear polarization (DLP) is compared to theoretical predictions obtained by Fermi-Dirac statistical filling of the electronic band structure calculated by the k • p envelope function method. We show that our measured DLP at room temperature, as well as values reported by other groups, are systematically higher than the theoretical predictions. We propose to solve this discrepancy between theory and experiment by introducing inhomogeneous broadening in our calculations. Considering indium content fluctuations and the localization lengths of electrons and holes, different effective broadenings are applied to different subsets of subbands. We thereby show that inhomogeneous broadening leads to an increase of the DLP at room temperature. Furthermore, the dependence of the optical properties on the excitation density is better reproduced. Looking at the DLP as a function of the temperature gives us insight into the thermalization dynamics of charge carriers.
机译：我们研究了不均匀展宽对高倾斜半极性和非极性In_xGa_（1-x）N / GaN量子阱的光学偏振特性的影响。生长了不同的平面m平面和（2021）样品（包括核-壳微棒），并通过依赖于激发的偏振分辨共聚焦微光致发光进行了表征。将测得的线性极化程度（DLP）与通过用k•p包络函数法计算的电子能带结构的Fermi-Dirac统计填充获得的理论预测进行比较。我们表明，我们在室温下测得的DLP以及其他小组报告的值在系统上高于理论预测。我们建议通过在计算中引入不均匀展宽来解决理论与实验之间的这种差异。考虑到铟含量的波动以及电子和空穴的定位长度，将不同的有效展宽应用于子带的不同子集。因此，我们表明在室温下不均匀的加宽导致DLP的增加。此外，更好地再现了光学性质对激发密度的依赖性。将DLP视为温度的函数，可以使我们深入了解电荷载流子的热动力学。

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  • 来源
    《Physical review》 |2016年第23期|235314.1-235314.12|共12页
  • 作者

    Christian Mounir; Ulrich T. Schwarz; Ingrid L. Koslow; Michael Kneissl; Tim Wernicke; Tilman Schimpke; Martin Strassburg;

  • 作者单位

    Department of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany;

    Department of Microsystems Engineering (IMTEK), University of Freiburg, Freiburg, Germany,Institute of Physics, Technische Universitaet Chemnitz, Chemnitz, Germany;

    Institute of Solid State Physics, Technische Universitaet Berlin, Berlin, Germany and Ferdinand-Braun-Institut, Leibniz-lnstitut fuer Hoechstfrequenztechnik, Berlin, Germany;

    Institute of Solid State Physics, Technische Universitaet Berlin, Berlin, Germany and Ferdinand-Braun-Institut, Leibniz-lnstitut fuer Hoechstfrequenztechnik, Berlin, Germany;

    Institute of Solid State Physics, Technische Universitaet Berlin, Berlin, Germany;

    OSRAM Opto Semiconductors GmbH, Regensburg, Germany;

    OSRAM Opto Semiconductors GmbH, Regensburg, Germany;

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