Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits

Ognjen Malkoc; Peter Stano; Daniel Loss

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Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits

机译：自旋量子位的电控制横向GaAs和Si / SiGe量子点的最佳几何形状

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We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to choose a robust optimal dot geometry, with the dot main axis along [110], or [110], where the qubit can be always optimized by reorienting the magnetic field.

机译：我们研究了磁场定向和量子点定向（相对于晶体坐标）对在门控半导体量子点中实现的电控量子比特质量的影响。我们发现，由于自旋轨道相互作用的各向异性，通过改变两个方向，可以在优化量子位与声子和控制电场的比例的意义上对量子位进行调谐。我们找到了仅通过重新定向磁场即可达到最佳设置的条件，以及需要点的特定位置时。我们还发现，自旋轨道相互作用强度的相对符号的知识允许选择健壮的最佳点几何，点主轴沿[110]或[110]，其中可以始终通过重新定向来优化qubit磁场。

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《Physical review》 |2016年第23期|235413.1-235413.11|共11页
作者
Ognjen Malkoc; Peter Stano; Daniel Loss;
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Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden,RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan;

RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan,Institute of Physics, Slovak Academy of Sciences, 845 11 Bratislava, Slovakia;

RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan,Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland;

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1. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot [J] . E. Kawakami, P. Scarlino, D. R. Ward, Nature nanotechnology . 2014,第9期

机译：Si / SiGe量子点中长寿命自旋量子比特的电控制
2. Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential [J] . Pavle Stipsic, Marko Milivojevic Physical review . 2020,第16期

机译：基于门控电位对称的横向GaAs量子点中的纺丝qubit控制
3. Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential [J] . Physical review, B . 2020,第16期

机译：基于门控电位对称的横向GaAs量子点中的纺丝qubit控制
4. Toward Si/SiGe Quantum Dot Spin Qubits: Gated Si/SiGe Single and Double Quantum Dots [C] . C. B. Simmons, J. R. Prance, Madhu Thalakulam, SiGe, Ge, and related compounds: materials, processing, and devices symposium;Electrochemical Society meeting . 2010

机译：朝向Si / SiGe量子点自旋量子位：门控Si / SiGe单量子点和双量子点
5. Singlet-triplet electron spin qubit in Si/SiGe double quantum dot. [D] . Wu, Xian. 2015

机译：Si / SiGe双量子点中的单重态-三重态电子自旋量子位。
6. Magnetically tunable singlet-triplet spin qubit in a four-electron InGaAs coupled quantum dot [O] . K. M. Weiss, J. Miguel-Sanchez, J. M. Elzerman -1

机译：四电子InGaAs耦合量子点中的磁可调谐单重态-三重态自旋量子比特
7. Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits [O] . Malkoc, Ognjen, Stano, Peter, Loss, Daniel 2016

机译：用于自旋量子位电控制的横向Gaas和si / siGe量子点的最佳几何结构

Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits

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