• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >In situ hard x-ray photoemission spectroscopy of barrier-height control at metal/PMN-PT interfaces
【24h】

In situ hard x-ray photoemission spectroscopy of barrier-height control at metal/PMN-PT interfaces

机译：金属/ PMN-PT界面的势垒高度控制原位硬X射线光电子能谱

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Metal-ferroelectric interfaces form the basis of novel electronic devices. A key effect determining the device functionality is the bias-dependent change of the electronic energy-level alignment at the interface. Here, hard x-ray photoelectron spectroscopy (HAXPES) is used to determine the energy-level alignment at two metal-ferroelectric interfaces-Au versus SrRuO_3 on the relaxor ferroelectric Pb(Mg_(1/3)Nb_(2/3))_(0.72)Ti_(0.28)O_3 (PMN-PT)-directly in situ as a function of electrical bias. The bias-dependent average shifts of the PMN-PT core levels are found to have two dominant contributions on the 0.1-1-eV energy scale: one depending on the metal electrode and the remanent electric polarization and the other correlated with electric-field-induced strain. Element-specific deviations from the average shifts are smaller than 0.1 eV and appear to be related to predicted dynamical charge variations in PMN-PT. In addition, the efficiency of ferroelectric polarization switching is shown to be reduced near the coercive field under x-ray irradiation. The results establish HAXPES as a tool for the in operando investigation of metal-ferroelectric interfaces and suggest electric-field-induced modifications of the polarization distribution as a novel way to control the barrier height at such interfaces.
机译：金属铁电接口构成了新型电子设备的基础。决定设备功能的关键作用是界面处电子能级对准的偏置相关变化。此处，使用硬X射线光电子能谱（HAXPES）确定弛豫铁电Pb（Mg_（1/3）Nb_（2/3））_上两个金属-铁电界面-Au与SrRuO_3的能级对准。 （0.72）Ti_（0.28）O_3（PMN-PT）-直接作为电偏压的函数。发现PMN-PT核心能级的与偏置有关的平均位移在0.1-1-eV能级上有两个主要贡献：一个取决于金属电极和剩余的极化，另一个与电场强度相关。诱发应变。与平均位移的元素特定偏差小于0.1 eV，并且似乎与PMN-PT中预测的动态电荷变化有关。另外，显示出在x射线照射下在矫顽场附近铁电极化切换的效率降低。结果建立了HAXPES作为金属-铁电界面实际操作研究的工具，并提出了电场引起的极化分布的改变，作为控制这种界面的势垒高度的新方法。

著录项

  • 来源
    《Physical review》 |2016年第23期|235415.1-235415.8|共8页
  • 作者

    E. Kroeger; A. Petraru; A. Quer; R. Soni; M. Kallaene; N. A. Pertsev; H. Kohlstedt; K. Rossnagel;

  • 作者单位

    Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, D-24098 Kiel, Germany;

    Nanoelektronik, Technische Fakultaet, Christian-Albrechts-Universitaet zu Kiel, D-24143 Kiel, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, D-24098 Kiel, Germany;

    Nanoelektronik, Technische Fakultaet, Christian-Albrechts-Universitaet zu Kiel, D-24143 Kiel, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, D-24098 Kiel, Germany,Ruprecht-Haensel-Labor, Christian-Albrechts-Universitaet zu Kiel, D-24098 Kiel, Germany;

    Ioffe Institute, St. Petersburg, Russia,Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia;

    Nanoelektronik, Technische Fakultaet, Christian-Albrechts-Universitaet zu Kiel, D-24143 Kiel, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, D-24098 Kiel, Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号