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Movement of magnetic domain walls induced by single femtosecond laser pulses

机译：飞秒激光脉冲引起的磁畴壁运动

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摘要

We present a microscopic investigation of how the magnetic domain structure in ultrathin films changes after direct excitation by single ultrashort laser pulses. Using photoelectron emission microscopy in combination with x-ray magnetic circular dichroism in the resonant absorption of soft x rays, we find that individual laser pulses of ≈60 fs duration and a central wavelength of 800 nm lead to clear changes in the domain structure of a Co layer of three atomic monolayers thickness in an epitaxial Co/Cu/Ni trilayer on a Cu(001) single-crystal substrate. A relatively small enhancement of the sample base temperature by 40 K is sufficient to lower the threshold of laser fluence for domain wall motion by about a factor of two. Pump-probe measurements with a laser fluence just below this threshold indicate that the laser-induced demagnetization of the sample is far from complete in these experiments. Although the domain wall motion appears similar to thermal domain wall fluctuations, quantitatively it cannot be explained by pure thermal activation of domain wall motion by the transient rise of sample temperature after the laser pulse, but it is likely to be triggered by a laser-induced depinning of domain walls.
机译：我们目前对单个超短激光脉冲直接激发后超薄膜中磁畴结构如何变化的微观研究。使用光电子发射显微镜结合X射线磁性圆二色性对软X射线的共振吸收，我们发现持续时间约60 fs的单个激光脉冲和800 nm的中心波长导致a的畴结构发生明显变化。在Cu（001）单晶衬底上的外延Co / Cu / Ni三层中具有三个原子单层厚度的Co层。样品基本温度相对较小的40 K升高足以将畴壁运动的激光通量阈值降低约2倍。激光能量密度刚好低于此阈值的泵浦探针测量表明，在这些实验中，激光诱导的样品退磁还远远没有完成。尽管畴壁运动看起来与热畴壁波动相似，但从数量上不能用纯粹是由激光脉冲后样品温度的瞬时升高引起的畴壁运动的热活化来解释，但很可能是由激光诱导的固定畴壁。

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  • 来源
    《Physical review》 |2016年第5期|054414.1-054414.7|共7页
  • 作者

    O. Sandig; Y. A. Shokr; J. Vogel; S. Valencia; F. Kronast; W. Kuch;

  • 作者单位

    Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin, Germany;

    Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin, Germany;

    CNRS, Institut Neel, 38042 Grenoble, France,Universite Grenoble Alpes, Institut Neel, 38042 Grenoble, France;

    Helmholtz-Zentrum Berlin fuer Materialien und Energie, Albert-Einstein-Strasse 25, 12489 Berlin, Germany;

    Helmholtz-Zentrum Berlin fuer Materialien und Energie, Albert-Einstein-Strasse 25, 12489 Berlin, Germany;

    Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin, Germany;

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