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Evolution of supercurrent path in Nb/Ru/Sr_2RuO_4 dc-SQUIDs

机译:Nb / Ru / Sr_2RuO_4 dc-SQUID中超电流路径的演变

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摘要

Phase-sensitive measurements of direct-current superconducting quantum interference devices (dc-SQUIDs) composed of Sr_2RuO_4-Ru eutectic crystals have been performed to temperatures below a bulk Ru superconducting transition temperature at 0.49 K. A SQUID with Nb/Ru/Sr_2RuO_4 junctions fabricated on one Ru inclusion exhibits two distinct transitions due to the Ru superconducting transition and competition of proximity-induced superconducting gaps at the junctions. At sufficiently low temperatures, the SQUID interference patterns start to collapse with large phase shifts of the Fraunhofer patterns. This result indicates the influence of magnetic fluxes induced by large bias currents flowing in a strongly asymmetric supercurrent path. Such a large change in supercurrent path suggests superconducting phase mismatch between the s-wave and chiral p-wave states at the Ru/Sr_2RuO_4 interface.
机译:由Sr_2RuO_4-Ru共晶晶体组成的直流超导量子干涉装置(dc-SQUIDs)的相敏测量已经在0.49 K的体Ru超导转变温度以下进行了温度测试。制作了具有Nb / Ru / Sr_2RuO_4结的SQUID在一个Ru夹杂物上,由于Ru超导转变和交界处的邻近感应超导间隙的竞争,表现出两个不同的转变。在足够低的温度下,SQUID干涉图随着弗劳恩霍夫图的大相移而开始崩溃。该结果表明由在强烈不对称的超电流路径中流动的大偏置电流引起的磁通量的影响。超电流路径的如此大的变化表明,Ru / Sr_2RuO_4界面的s波和手性p波状态之间的超导相位失配。

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  • 来源
    《Physical review》 |2016年第5期|054501.1-054501.8|共8页
  • 作者单位

    Department of Applied Physics, Faculty of Science, Tokyo University of Science, Tokyo 125-8585, Japan;

    Department of Mathematical and Physical Sciences, Faculty of Science, Japan Women's University, Tokyo 112-8681, Japan;

    Department of Applied Physics, Faculty of Science, Tokyo University of Science, Tokyo 125-8585, Japan;

    Department of Applied Physics, Faculty of Science, Tokyo University of Science, Tokyo 125-8585, Japan;

    Institute of Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan;

    National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan;

    Department of Applied Physics, Faculty of Science, Tokyo University of Science, Tokyo 125-8585, Japan,International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan;

    Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan;

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