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Hot spot formation in electron-doped PCCO nanobridges

机译：电子掺杂PCCO纳米桥中的热点形成

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摘要

We have investigated the transport properties of optimally doped Pr_(2-x)Ce_xCuO_(4-δ) (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.
机译：我们已经研究了宽度小于100 nm的最佳掺杂Pr_（2-x）Ce_xCuO_（4-δ）（PCCO）纳米桥的传输特性。纳米桥的临界电流密度接近Ginzburg-Landau理论极限，这证明了纳米结构的性质接近于成膜的薄膜。当前的电压特性在几个毫伏量级的尖锐电压开关下具有滞后性，我们可以通过形成热点来解释。通过对纳米桥中的热传递进行建模而获得的俘获电流和电压开关的值与实验值非常接近。该功能以及极短的重组时间使PCCO纳米结构成为超快单光子探测器的诱人候选者。

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  • 来源
    《Physical review》 |2016年第6期|060503.1-060503.5|共5页
  • 作者

    S. Charpentier; R. Arpaia; J. Gaudet; D. Matte; R. Baghdadi; T. Loefwander; D. Golubev; P. Fournier; T. Bauch; F. Lombardi;

  • 作者单位

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg, Sweden;

    Canadian Institute for Advanced Research, Departement de Physique, Universite de Sherbrooke, J1K 2R1 Sherbrvoke, Canada;

    Canadian Institute for Advanced Research, Departement de Physique, Universite de Sherbrooke, J1K 2R1 Sherbrvoke, Canada;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg, Sweden;

    Applied Quantum Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg, Sweden;

    Low Temperature Laboratory (OVLL), Aalto University School of Science, P.O. Box 13500, FI-00076 Aalto, Finland,Institute of Nanotechnology, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany;

    Canadian Institute for Advanced Research, Departement de Physique, Universite de Sherbrooke, J1K 2R1 Sherbrvoke, Canada;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg, Sweden;

    Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg, Sweden;

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