...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physical review >Voltage drop due to longitudinal spin accumulation across the ballistic domain wall
【24h】

Voltage drop due to longitudinal spin accumulation across the ballistic domain wall

机译：由于在弹道域壁上的纵向自旋积累而导致的电压降

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The ballistic magnetoresistance (MR) of a domain wall constricted in a nanocontact between two p-type semiconducting magnetic nanowires is studied theoretically using the Landauer-Buettiker approach. Our analysis is based on coherent scattering of the carriers by the spin-dependent potential associated with the wall structure. The transmission properties of coherent states are obtained by introducing an algorithm to solve the coupled spin channels Schrodinger equation with mixed Dirichlet-Neumann boundary conditions applied far from the domain wall. Then, the local accumulated spin densities along the nanowire produced by electrical spin injection at the nanocontact are numerically calculated. It is demonstrated that the induced voltage drop due to the longitudinal spin accumulation considerably increases in the case of the narrow domain walls. Furthermore, it is shown that two spin accumulation and mistracking effects give approximately equal contributions to the wall MR ratio in the limit of the sharp domain walls. However, the MR ratio is dominantly determined by the spin accumulation effect as the domain wall width increases.
机译：理论上使用Landauer-Buettiker方法研究了在两条p型半导体磁性纳米线之间的纳米接触中收缩的畴壁的弹道磁阻（MR）。我们的分析基于与壁结构相关的自旋相关电位对载流子的相干散射。通过引入一种算法来求解相干态的传输特性，该算法可以在远离畴壁的情况下使用混合Dirichlet-Neumann边界条件求解耦合的自旋通道Schrodinger方程。然后，通过数值计算在纳米接触处通过电自旋注入产生的沿着纳米线的局部累积自旋密度。已经证明，在窄畴壁的情况下，由于纵向自旋积累而引起的感应电压降大大增加。此外，表明在尖锐畴壁的极限中，两个自旋累积和误轨效应对壁MR比的贡献大致相等。然而，随着畴壁宽度的增加，MR比主要由自旋累积效应决定。

著录项

  • 来源
    《Physical review》 |2016年第6期|064426.1-064426.7|共7页
  • 作者

    V. Fallahi; R. Safaei;

  • 作者单位

    Department of Laser and Optical Engineering, University of Bonab, 5551761167 Bonab, Iran;

    Department of Laser and Optical Engineering, University of Bonab, 5551761167 Bonab, Iran;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号