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Resonant tunneling and intrinsic bistability in twisted graphene structures

机译:扭曲石墨烯结构中的共振隧穿和固有双稳态

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摘要

We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable Ⅰ-Ⅴ characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. The nanoscale architecture can enable uniquely fast switching times.
机译:我们预测扭曲的石墨烯层形成的异质结构中的垂直传输可以表现出独特的双稳性机制。共振隧穿和层间电荷耦合产生固有的双稳态Ⅰ-Ⅴ特性,从而在顺序隧穿状态下实现多个稳定状态。我们考虑一个简单的三层体系结构,其中外层充当源极和漏极,而中间层则浮置。在偏压下,中间层可以与源极层和漏极层谐振或不谐振。双稳态由在实验中容易调整的几何设备参数控制。纳米级架构可以实现独特的快速切换时间。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2016年第8期|085412.1-085412.7|共7页
  • 作者单位

    Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

    Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA,Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

    Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

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