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首页> 外文期刊>Physical review >Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets
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Pseudospin anisotropy of trilayer semiconductor quantum Hall ferromagnets

机译：三层半导体量子霍尔铁磁体的伪纺丝各向异性

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摘要

When two Landau levels are brought to a close coincidence between them and with the chemical potential in the integer quantum Hall regime, the two Landau levels can just cross or collapse while the external or pseudospin field that induces the alignment changes. In this work, all possible crossings are analyzed theoretically for the particular case of semiconductor trilayer systems, using a variational Hartree-Fock approximation. The model includes tunneling between neighboring layers, bias, intralayer, and interlayer Coulomb interaction among the electrons. We have found that the general pseudospin anisotropy classification scheme used in bilayers applies also to the trilayer situation, with the simple crossing corresponding to an easy-axis ferromagnetic anisotropy analogy, and the collapse case corresponding to an easy-plane ferromagnetic analogy. An isotropic case is also possible, with the levels just crossing or collapsing depending on the filling factor and the quantum numbers of the two nearby levels. While our results are valid for any integer filling factor v (=1,2,3,...), we have analyzed in detail the crossings at v = 3 and 4, and we have given clear predictions that will help in their experimental search. In particular, the present calculations suggest that by increasing the bias, the trilayer system at these two filling factors can be driven from an easy-plane anisotropy regime to an easy-axis regime, and then can be driven back to the easy-plane regime. This kind of reentrant behavior is a unique feature of the trilayers, compared with the bilayers.
机译：当两个朗道能级与整数量子霍尔系统中的化学势紧密吻合时，两个朗道能级可能会交叉或坍塌，而外部或伪自旋场会导致取向发生变化。在这项工作中，使用变分的Hartree-Fock逼近，针对半导体三层系统的特殊情况，从理论上分析了所有可能的交叉。该模型包括相邻层之间的隧穿，电子之间的偏置，层内和层间库仑相互作用。我们发现，双层中使用的一般伪自旋各向异性分类方案也适用于三层情况，其中简单交叉对应于易轴铁磁各向异性，塌陷情况对应于易平面铁磁相似。各向同性的情况也是可能的，根据填充系数和附近两个能级的量子数，能级刚好交叉或崩溃。虽然我们的结果对于任何整数填充因子v（= 1,2,3，...）都是有效的，但我们已经详细分析了v = 3和4处的交叉，并给出了明确的预测，这将有助于他们进行实验搜索。特别地，本计算结果表明，通过增加偏差，可以将这两个填充因子下的三层系统从易平面各向异性机制转换为易轴机制，然后再驱动回易平面机制。 。与双层相比，这种可重入行为是三层的独特功能。

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  • 来源
    《Physical review》 |2016年第8期|085304.1-085304.13|共13页
  • 作者

    D. Miravet; C. R. Proetto;

  • 作者单位

    Centro Atomico Bariloche and Instituto Balseiro, 8400 S. C. de Bariloche, Rio Negro, Argentina;

    Centro Atomico Bariloche and Instituto Balseiro, 8400 S. C. de Bariloche, Rio Negro, Argentina;

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