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Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene

机译：石墨烯中的外在机理使电荷电流与自旋极化直接耦合

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摘要

Spintronics-the all-electrical control of the electron spin for quantum or classical information storage and processing-is one of the most promising applications of the two-dimensional material graphene. Although pristine graphene has negligible spin-orbit coupling (SOC), both theory and experiment suggest that SOC in graphene can be enhanced by extrinsic means, such as functionalization by adatom impurities. We present a theory of transport in graphene that accounts for the spin-coherent dynamics of the carriers, including hitherto-neglected spin precession processes taking place during resonant scattering in the dilute impurity limit. We uncover an "anisotropic spin precession" (ASP) scattering process in graphene, which contributes a large current-induced spin polarization and modifies the standard spin Hall effect. ASP scattering arises from two dimensionality and extrinsic SOC, and apart from graphene, it can be present in other 2D materials or in the surface states of 3D materials with a fluctuating SOC. Our theory also yields a comprehensive description of the spin relaxation mechanisms present in adatom-decorated graphene, including Elliot-Yafet and D'yakonov-Perel relaxation rates, the latter of which can become an amplification process in a certain parameter regime of the SOC disorder potential. Our work provides theoretical foundations for designing future graphene-based integrated spintronic devices.
机译：自旋电子学-用于量子或经典信息存储和处理的电子自旋的全电控制-是二维材料石墨烯最有希望的应用之一。尽管原始石墨烯的自旋轨道耦合（SOC）可以忽略不计，但理论和实验均表明，石墨烯中的SOC可以通过外在手段（例如通过原子杂质进行功能化）来增强。我们提出了一种石墨烯中的输运理论，该理论解释了载流子的自旋相干动力学，包括迄今被忽略的自旋进动过程，该过程在稀杂质极限中发生了共振散射。我们发现了石墨烯中的“各向异性自旋进动”（ASP）散射过程，该过程有助于产生大电流诱导的自旋极化并修改标准自旋霍尔效应。 ASP散射是由二维和非本征SOC引起的，除了石墨烯外，它还可能存在于其他2D材料中或SOC波动的3D材料的表面状态中。我们的理论还对存在于吸附原子的石墨烯中存在的自旋弛豫机制进行了全面描述，包括Elliot-Yafet和D'yakonov-Perel弛豫率，后者可以在SOC障碍的某个参数范围内成为放大过程。潜在。我们的工作为设计未来基于石墨烯的集成自旋电子器件提供了理论基础。

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  • 来源
    《Physical review》 |2016年第8期|085414.1-085414.18|共18页
  • 作者

    Chunli Huang; Y. D. Chong; Miguel A. Cazalilla;

  • 作者单位

    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore,Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan;

    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;

    Department of Physics, National Tsing Hua University and National Center for Theoretical Sciences (NCTS), Hsinchu 30013, Taiwan,Donostia International Physics Center (DIPC), Manuel de Lardizabal 4, 20018 San Sebastian, Spain;

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