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首页> 外文期刊>Physical review >Strongly enhanced Rashba splittings in an oxide heterostructure: A tantalate monolayer on BaHfO_3
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Strongly enhanced Rashba splittings in an oxide heterostructure: A tantalate monolayer on BaHfO_3

机译：氧化物异质结构中强烈增强的Rashba分裂：BaHfO_3上的钽单层

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摘要

In the two-dimensional electron gas emerging at the transition metal oxide surface and interface, various exotic electronic ordering and topological phases can become experimentally more accessible with the stronger Rashba spin-orbit interaction. Here, we present a promising route to realize significant Rashba-type band splitting using a thin film heterostructure. Based on first-principles methods and analytic model analyses, a tantalate monolayer on BaHfO_3 is shown to host two-dimensional bands originating from Ta t_(2g) states with strong Rashba spin splittings, nearly 10% of the bandwidth, at both the band minima and saddle points. An important factor in this enhanced splitting is the significant t_(2g)-e_g interband coupling, which can generically arise when the inversion symmetry is maximally broken due to the strong confinement of the 2DEG on a transition metal oxide surface. Our results could be useful in realizing topological superconductivity at oxide surfaces.
机译：在过渡金属氧化物表面和界面处出现的二维电子气中，随着Rashba自旋轨道相互作用的增强，各种奇异的电子有序和拓扑相在实验上将变得更容易访问。在这里，我们提出了一个有前途的途径，以利用薄膜异质结构实现显着的Rashba型能带分裂。基于第一性原理方法和分析模型分析，BaHfO_3上的钽酸盐单层显示出来自Ta t_（2g）态的二维带，具有强Rashba自旋分裂，在两个带的最小值处，带宽接近10％。和鞍点。增强分裂的一个重要因素是有效的t_（2g）-e_g带间耦合，当由于过渡金属氧化物表面上2DEG的强烈限制而最大程度地破坏反转对称性时，通常会出现这种情况。我们的结果可能有助于实现氧化物表面的拓扑超导性。

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  • 来源
    《Physical review》 |2016年第11期|115431.1-115431.9|共9页
  • 作者

    Minsung Kim; Jisoon Ihm; Suk Bum Chung;

  • 作者单位

    Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea,Ames Laboratory, US DOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA;

    Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea,Department of Physics, Pohang University of Science and Technology, Pohang 790-984, Korea;

    Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea,Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, Korea;

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