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Surface and bulk contributions to the second-harmonic generation in Bi_2Se_3

机译:表面和整体对Bi_2Se_3中的第二谐波产生的贡献

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摘要

Second harmonic generation (SHG) from three-dimensional topological insulators originates from both surface and bulk, which does not allow probing of surface states unless the measurement can separate the two contributions. In this paper, we used combined measurements of transmitted and reflected SHG from epitaxially grown Bi_2Se_3 thin films of different thickness on BaF_2, and a bulk Bi_2Se_3 crystal, to deduce surface and bulk nonlinear susceptibilities of Bi_2Se_3 separately. We found that the surface contribution to SHG was comparable to that from the bulk of the crystal, but becomes dominant in ultrathin films. In the latter case, contributions from both air/Bi_2Se_3 and Bi_2Se_3/BaF_2 interfaces were significant and exhibited a strong out-of-plane polar ordering. The bulk contribution came mainly from the space charge region (SCR), which was formed by Se vacancies aggregated at the air/Bi_2Se_3 interface; its magnitude can provide an estimate on the field strength in the SCR. Clarification of surface and bulk contributions to SHG can help nonlinear optical techniques be used as a versatile in situ probe for topological insulators.
机译:三维拓扑绝缘体产生的二次谐波(SHG)起源于表面和体积,除非测量可以将这两个因素分开,否则不允许探测表面状态。在本文中,我们结合使用了在BaF_2上外延生长的不同厚度的Bi_2Se_3薄膜和块状Bi_2Se_3晶体的透射和反射SHG的组合测量结果,分别推导了Bi_2Se_3的表面和块状磁化率。我们发现,SHG的表面贡献与晶体的大部分相当,但在超薄薄膜中占主导地位。在后一种情况下,air / Bi_2Se_3和Bi_2Se_3 / BaF_2界面的贡献均很大,并且显示出很强的面外极性排序。大量贡献主要来自空间电荷区(SCR),该空间电荷区由在air / Bi_2Se_3界面上聚集的Se空位形成;它的大小可以估算SCR中的场强。澄清对SHG的表面和体积的影响可以帮助非线性光学技术用作拓扑绝缘体的通用原位探针。

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  • 来源
    《Physical review》 |2016年第20期|205307.1-205307.8|共8页
  • 作者单位

    Physics Department, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Collaborative Innovation Center of Advanced Microstructures (Nanjing), Fudan University, Shanghai 200433, China;

    Physics Department, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Collaborative Innovation Center of Advanced Microstructures (Nanjing), Fudan University, Shanghai 200433, China;

    Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;

    Physics Department, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Collaborative Innovation Center of Advanced Microstructures (Nanjing), Fudan University, Shanghai 200433, China;

    Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;

    State Key Laboratory of Functional Materials for Information, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;

    Physics Department, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Collaborative Innovation Center of Advanced Microstructures (Nanjing), Fudan University, Shanghai 200433, China,Physics Department, University of California at Berkeley, Berkeley, California 94720, USA;

    Physics Department, State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Collaborative Innovation Center of Advanced Microstructures (Nanjing), Fudan University, Shanghai 200433, China;

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