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Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

机译:具有几乎晶格匹配的势垒的InAs量子阱中迁移率的限制

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摘要

The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al_(1-x)Ga_xSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750 000 cm~2 V~(-1) s~(-1) was achieved at a sample temperature of 2 K.
机译:报道了一系列二维电子系统的低温迁移率的增长和密度依赖性,该二维电子系统局限于无意掺杂的,具有Al_(1-x)Ga_xSb势垒的低扩展缺陷密度InAs量子阱。通过利用双门控装置独立研究迁移率对载流子密度和电场的依赖性,确定了限制电子迁移率的散射机理。对可能的散射机制的分析表明,迁移率主要受窄量子阱中粗糙的界面以及在第一个被占据的电子子带内高载流子密度下宽阱中合金无序和界面粗糙度的限制。在低载流子密度下,迁移率对载流子密度的功能依赖性提供了带电缺陷引起的库仑散射的证据。在2 K的样品温度下,获得了超过750 000 cm〜2 V〜(-1)s〜(-1)的门控电子迁移率。

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  • 来源
    《Physical review》 |2016年第24期|245306.1-245306.8|共8页
  • 作者单位

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark;

    Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

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