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机译:具有几乎晶格匹配的势垒的InAs量子阱中迁移率的限制
Materials Department, University of California, Santa Barbara, California 93106, USA;
Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark;
Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
机译:具有几乎晶格匹配的势垒的InAs量子阱中迁移率的限制
机译:在GaAs量子阱中引入了用于极性光子的薄InAs势垒的结果,两势垒AlGaAs / GaAs / AlGaAs异质结构中的电子迁移率增加
机译:晶格匹配的GaAsSb覆盖层对InAs / InGaAs / InP量子点结构性能的影响
机译:具有p型GaAs阱和晶格匹配的三元和四元势垒的无铝量子阱子带间光电探测器
机译:InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:关于Inas量子阱中迁移率的极限 格子匹配障碍
机译:用于高电子迁移率晶体管的Inalsb / Inas / alGasb量子阱异质结构。