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Switchable conductivity at the ferroelectric interface: Nonpolar oxides

机译：铁电界面处的电导率可切换：非极性氧化物

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摘要

We investigate theoretically the interface between a ferroelectric BaTiO_3 film and a nonpolar insulating SrTiO_3 substrate. We find that thin BaTiO_3 (under 5 nm) can stabilize a nonpolarized state, and an additional metastable polarized state. While the nonpolarized state is insulating, for the polarized heterostructure, we discover the existence of two-dimensional charge carrier gases. In this case, the heterostructure undergoes an electronic reconstruction in order to prevent the polar catastrophe. The two-dimensional gases, formed as a result, screen the polarization, leading to a substantially reduced potential drop across the ferroelectric film. We emphasize that the two-dimensional electron and hole gases are created by the polarization of the sample, and are not due to the polar nature of the material or to doping.
机译：我们从理论上研究铁电BaTiO_3薄膜和非极性绝缘SrTiO_3衬底之间的界面。我们发现，薄的BaTiO_3（在5 nm以下）可以稳定非极化状态，并具有附加的亚稳态极化状态。当非极化状态处于绝缘状态时，对于极化异质结构，我们发现了二维电荷载气的存在。在这种情况下，对异质结构进行电子重构，以防止极性灾难。结果形成的二维气体屏蔽了极化，从而导致铁电薄膜上的电势降大大降低。我们强调，二维电子和空穴气体是由样品的极化产生的，而不是由于材料的极性或掺杂引起的。

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