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Diamagnetism and suppression of screening as hallmarks of electron-hole pairing in a double layer graphene system

机译：双层石墨烯系统中的反磁性和屏蔽抑制作为电子-空穴对的标志

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摘要

We study how the electron-hole pairing reveals itself in the response of a double layer graphene system to the vector and scalar potentials. Electron-hole pairing results in a rigid (London) relation between the current and the difference of vector potentials in two adjacent layers. The diamagnetic effect can be observed in multiple connected systems in the magnetic field parallel to the graphene layers. Such an effect would be considered as a hallmark of the electron-hole pairing, but the value of the effect is extremely small. Electron-hole pairing significantly changes the response to the scalar potential, as well. It results in a complete (at zero temperature) or partial (at finite temperature) suppression of screening of the electric field of a test charge situated at some distance to the double layer system. A strong increase of the electric field induced by the test charge under decrease in temperature can be considered as a spectacular hallmark of the electron-hole pairing.
机译：我们研究了电子-空穴对如何在双层石墨烯系统对矢量和标量电势的响应中显示自身。电子-空穴配对导致电流与两个相邻层中矢量电势差之间的刚性（伦敦）关系。可以在平行于石墨烯层的磁场中的多个连接系统中观察到反磁效应。这种效应被认为是电子-空穴配对的标志，但是该效应的值非常小。电子-空穴配对也显着改变了对标量电势的响应。这导致完全（在零温度下）或部分（在有限温度下）屏蔽离双层系统一定距离的测试电荷的电场。在温度下降的情况下，由测试电荷引起的电场的强烈增加可被视为电子-空穴对的引人注目的标志。

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