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Dirac semimetal films as spin conductors on topological substrates

机译:Dirac半金属膜作为拓扑衬底上的自旋导体

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摘要

Spin-momentum locked states, notably those found on the surfaces of topological insulators, are promising for low-power electronic devices based on spin transport. Here we report a much more versatile case involving a Dirac semimetal film, theoretically modeled by low-Z substitution of Bi_2Se_3, on a Bi_2Se_3 topological insulator substrate. Such a film can carry highly spin-polarized conduction channels by electronic coupling to the substrate. The spin channel width, defined by the film thickness, is at the designer's disposal, thus permitting optimization of the system parameters. The results demonstrate Dirac semimetals as an important class of material for spintronic applications.
机译:自旋动量锁定状态,尤其是在拓扑绝缘体的表面上发现的状态,对于基于自旋传输的低功率电子设备很有希望。在这里,我们报告了一个更通用的案例,涉及Dirac半金属膜,理论上通过Bi_2Se_3拓扑绝缘体衬底上的Bi_2Se_3的低Z取代建模。这样的膜可以通过电子耦合至基板而携带高度自旋极化的导电通道。由薄膜厚度定义的旋转通道宽度由设计人员决定,因此可以优化系统参数。结果表明,狄拉克半金属是自旋电子学应用中的重要材料。

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