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Efficient conversion of light to charge and spin in Hall-bar microdevices

机译:将光有效转换为霍尔棒微设备中的电荷和自旋

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摘要

We report an experimental study of the direct conversion of light into electrical signals in GaAs/AlGaAs Hall-bar microdevices. Our approach, based on different modulation frequencies of the intensity and polarization of the laser beam, allows us to disentangle the charge- and spin-dependent parts of the induced electrical signal and to link them to the incident light intensity and polarization, respectively. We demonstrate that the efficiency of the light to spin conversion in our electrical polarimeter is strongly enhanced by adding a drift component to the transport of the spin-polarized photocarriers, as compared to a purely diffusive transport regime of the device. For a micron-size focused laser beam, the experiments demonstrate that the light to charge and spin conversion efficiency depends on the precise position of the light spot, reflecting the spatially dependent response function of the Hall cross.
机译:我们报告了在GaAs / AlGaAs霍尔微器件中将光直接转换为电信号的实验研究。我们的方法基于激光束强度和偏振的不同调制频率,使我们能够解开感应电信号的电荷和自旋相关部分,并将它们分别与入射光强度和偏振相关联。我们证明,与器件的纯扩散传输方式相比,通过在自旋偏振光载流子的传输中添加漂移分量,可以大大提高电偏振仪中自旋转换的效率。对于微米大小的聚焦激光束,实验表明,电荷充电和自旋转换效率取决于光斑的精确位置,反映了霍尔十字在空间上的响应函数。

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  • 来源
    《Physical review》 |2015年第12期|125205.1-125205.5|共5页
  • 作者单位

    Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic,Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Praha 2, Czech Republic;

    Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

    Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic;

    Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge CB3 0HE, United Kingdom;

    Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic;

    Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic,School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom;

    Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic,Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    spin polarized transport in semiconductors; optical creation of spin polarized carriers;

    机译:半导体中的自旋极化传输;自旋极化载流子的光学产生;

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