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Activation of antiferromagnetic domain switching in exchange-coupled Fe/CoO/MgO(001) systems

机译:交换耦合Fe / CoO / MgO(001)系统中反铁磁畴切换的激活

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摘要

In contrast to the extensive study of domain reversal in ferromagnetic materials, the domain switching process in antiferromagnets is much less studied due to the difficulty of probing antiferromagnetic spins. Using a combination of hysteresis loop, Kerr microscope, and x-ray magnetic linear dichroism measurements, we investigated the antiferromagnetic (AFM) domain switching process in single crystalline Fe/CoO bilayers on MgO(001). We demonstrate that the CoO AFM switching is a Kolmogorov-Avrami process in which the thermal activation energy creates AFM domain nucleation centers which further expand by domain wall propagation. From the temperature-and thickness-dependent measurements, we are able to retrieve quantitatively the important parameter of the CoO AFM activation energy, which is shown to increase linearly with CoO thickness.
机译:与广泛研究铁磁材料中的畴反转相反,由于探测反铁磁自旋的困难,反铁磁体中的畴切换过程的研究少得多。使用磁滞回线,Kerr显微镜和X射线磁性线性二向色性测量的组合,我们研究了MgO(001)上单晶Fe / CoO双层中的反铁磁(AFM)域切换过程。我们证明,CoO AFM切换是一个Kolmogorov-Avrami过程,其中热活化能产生AFM域成核中心,并通过域壁传播进一步扩展。从温度和厚度相关的测量中,我们能够定量地检索CoO AFM活化能的重要参数,该参数显示为随CoO厚度线性增加。

著录项

  • 来源
    《Physical review》 |2015年第13期|134428.1-134428.5|共5页
  • 作者单位

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    NCEM, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    NCEM, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

    Chinese Academy of Sciences, Ningbo Institute of Materials Technology and Engineering, Key Laboratory of Magnetic Materials and Devices, Ningbo 315201, Zhejiang, People's Republic of China;

    Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;

    National Laboratory of Solid State Microstructures, Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China;

    Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA;

    Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetic properties of monolayers and thin films;

    机译:单层和薄膜的磁性;

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