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首页> 外文期刊>Physical review >Probing the Fermi surface of three-dimensional Dirac semimetal Cd_3As_2 through the de Haas-van Alphen technique
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Probing the Fermi surface of three-dimensional Dirac semimetal Cd_3As_2 through the de Haas-van Alphen technique

机译:通过de Haas-van Alphen技术探测三维Dirac半金属Cd_3As_2的费米表面

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摘要

We have observed Shubnikov-de Haas and de Haas-van Alphen effects in the single crystals of the three-dimensional Dirac semimetal Cd_3As_2 up to 50 K, traceable at fields as low as 2 and 1 T, respectively. The values of the Fermi wave vector, the Fermi velocity, and the effective cyclotron mass of the charge carrier, calculated from both techniques, are close to each other and match well with earlier reports. However, the de Haas-van Alphen effect clearly reflects the existence of two different Fermi surface cross sections along certain directions and a nontrivial Berry's phase, which is the signature of a three-dimensional Dirac fermion in Cd_3As_2.
机译:我们已经观察到高达50 K的三维Dirac半金属Cd_3As_2单晶中的Shubnikov-de Haas和de Haas-van Alphen效应,可分别在低至2 T和1 T的场中追踪到。从这两种技术计算得出的费米波矢量,费米速度和电荷载流子的有效回旋加速器的值彼此接近,并且与较早的报道非常吻合。然而,de Haas-van Alphen效应清楚地反映了沿某些方向存在两个不同的费米表面横截面以及一个非平凡的贝里相,这是Cd_3As_2中三维狄拉克费米子的特征。

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