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Correlation effects in the capacitance of a gated carbon nanotube

机译：栅碳纳米管电容的相关效应

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For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that when the average spacing n~(-1) between electrons within the low-density one-dimensional electron gas (1DEG) in the CNT is larger than the physical separation d between the CNT and the gate, the enhancement of capacitance is expected to be big. A recent experiment [J. Waissman et al., Nature Nanotechnol. 8, 569 (2013)], however, has observed no obvious increase of capacitance even at very low electron density. We show that this smaller capacitance can be understood as the result of the confining potential produced by the potential difference between the source/drain electrodes and the gate, which compresses the 1DEG when the electron number decreases. We suggest that by profiling the potential with the help of multiple split gates, one can return to the case of a uniform 1DEG with anomalously large capacitance.
机译：对于由悬浮在金属栅极上方的半导体碳纳米管（CNT）制成的电容器，单个电子之间的库仑相关性会导致电容远大于几何电容。我们认为，当CNT中低密度一维电子气（1DEG）中电子之间的平均间距n〜（-1）大于CNT与栅极之间的物理间距d时，电容的增加为预计会很大。最近的实验[J. Waissman等人，Nature Nanotechnol。 8，8，569（2013）]，然而，即使在非常低的电子密度下，也没有观察到电容的明显增加。我们表明，该较小的电容可以理解为源/漏电极与栅极之间的电势差所产生的限制电势的结果，当电子数减少时，该电势会压缩1DEG。我们建议通过借助多个分离栅极来分析电势，可以回到具有异常大电容的均匀1DEG的情况。

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