LaAlO_3/SrTiO_3 interfaces doped with rare-earth ions

著录项

• 来源
  《Physical review》 |2015年第20期|205112.1-205112.5|共5页
• 作者

  T. D. Sanders; M. T. Gray; F. J. Wong; Y. Suzuki;

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• 作者单位

  Department of Applied Physics, Stanford University, Stanford, California 94305, USA,Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA;

  Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA,Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA;

  Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;

  Department of Applied Physics, Stanford University, Stanford, California 94305, USA,Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  electron states at surfaces and interfaces; electronic transport in interface structures; galvanomagnetic and other magnetotransport effects;

  机译：表面和界面的电子态;接口结构中的电子传输;电磁和其他磁传输效应;