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机译:由于拓扑绝缘体Tl_(1-x)Bi_(1 + x)Se_(2-δ)中的体绝缘特性而产生的自旋电流可调
Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan;
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan;
Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan;
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan;
Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;
Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;
Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;
Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan;
Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;
Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;
Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan,Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan;
Kure National College of Technology, Agaminami 2-2-11, Kure 737-8506, Japan;
Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan;
electron states at surfaces and interfaces; electron density of states and band structure of crystalline solids; photoemission and photoelectron spectra;
机译:块绝缘拓扑绝缘体Bi_(1.5)Sb_(0.5)Te_(1.7)Se_(1.3)的超快瞬态光电载流子动力学
机译:大块绝缘拓扑绝缘子Bi_(2-x)Sb_xTe_(3-y)Se_y的功函数
机译:Bi_(2-x)Sb_xTe_(3-y)Se_y拓扑绝缘合金中本体绝缘响应的红外探针
机译:新季锡和铅铋的结构和热电性能,K_(1 + x)M_(4-2x)Bi_(7 + x)Se_(15)(m = sn,pb)和k_(1-x)sn_ (5-x)Bi_(11 + x)SE_(22)
机译:体的自旋极化的提取和金属-绝缘体转变附近的薄g硅的传输性质的测量。
机译:拓扑绝缘子(Bi1-xSbx)2Te3中可调Dirac锥和绝缘体状态的实现
机译:散装绝缘性能与载体操纵的实现 理想拓扑绝缘体TlBise2的可逆自旋电流状态