Spin relaxation via exchange with donor impurity-bound electrons

著录项

• 来源
  《Physical review》 |2015年第24期|241405.1-241405.5|共5页
• 作者

  Lan Qing; Jing Li; Ian Appelbaum; Hanan Dery;

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• 作者单位

  Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA ,Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA;

  Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA;

  Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA;

  Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA ,Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  impurity and defect levels; exchange interactions; spin polarized transport in semiconductors;

  机译：杂质和缺陷水平;交流互动;半导体中的自旋极化传输;