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首页> 外文期刊>Physical review >ESR measurements of phosphorus dimers in isotopically enriched ~(28)Si silicon
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ESR measurements of phosphorus dimers in isotopically enriched ~(28)Si silicon

机译：同位素富集〜（28）Si硅中磷二聚体的ESR测量

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摘要

Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched ~(28)Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in ~(28)Si and report two results. First, a fine structure is observed in the ESR spectrum arising from state mixing by the hyperfine coupling to the ~(31)P nuclei, which is enhanced when the exchange energy is comparable to the Zeeman energy. This fine structure enables us to spectroscopically address two separate dimer subensembles, the first with exchange (J) coupling ranging from 2 to 7 GHz and the second with J ranging from 6 to 60 GHz. Next, the average spin relaxation times T_1 and T_2 of both dimer subensembles were measured using pulsed ESR at 0.35 T. Both T_1 and T_2 for transitions between triplet states of the dimers were found to be identical to the relaxation times of isolated phosphorus donors in ~(28)Si, with T_2 = 4 ms at 1.7 K limited by spectral diffusion due to dipolar interactions with neighboring donor electron spins. This result, consistent with theoretical predictions, implies that an exchange coupling of 2-60 GHz does not limit the dimer T_1 and T_2 in bulk Si at the 10-ms time scale.
机译：硅中的掺杂剂已经使用光学和电子自旋共振（ESR）光谱学进行了数十年的研究。近来，在同位素富集的〜（28）Si中的掺杂剂光谱中观察到了新的特征，因为这种材料中减少的不均匀线宽提高了光谱分辨率。考虑到这一点，我们在〜（28）Si中的交换耦合磷二聚体上测量了ESR，并报告了两个结果。首先，在ESR光谱中观察到精细结构，这是由于超精细耦合至〜（31）P核而引起的状态混合所致，当交换能量与Zeeman能量相当时，这种结构会增强。这种精细的结构使我们能够在光谱上解决两个单独的二聚体子组件的问题，第一个具有交换（J）耦合范围为2至7 GHz，第二个具有J的范围为6至60 GHz。接下来，使用脉冲ESR在0.35 T下测量两个二聚体子组件的平均自旋弛豫时间T_1和T_2。发现T_1和T_2在二聚体的三重态之间转变的时间与孤立的磷供体在〜时的弛豫时间相同。 （28）Si，在1.7 K时T_2 = 4 ms，受与相邻施主电子自旋的偶极相互作用而受到光谱扩散的限制。该结果与理论预测一致，表明2-60 GHz的交换耦合不会在10毫秒的时间尺度上限制体Si中的二聚体T_1和T_2。

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  • 来源
    《Physical review》 |2015年第24期|245206.1-245206.10|共10页
  • 作者

    S. Shankar; A. M. Tyryshkin; S. A. Lyon;

  • 作者单位

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA ,Department of Applied Physics, Yale University, New Haven, CT 06511;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

    Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA;

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  • 正文语种 eng
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  • 关键词

    electron paramagnetic resonance and relaxation; elemental semiconductors;

    机译：电子顺磁共振和弛豫;元素半导体;

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