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首页> 外文期刊>Physical review >Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion
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Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

机译：具有晶格畸变的二氧化钒薄膜中金属-绝缘体转变温度调制的热功率分析

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摘要

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO_2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO_2 epitaxial films with different crystallographic orientations, grown on (0001) α-Al_2O_3, (112-bar0) α-Al_2O_3, and (001) TiO_2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ～200 to 23 μV K~(-1), along with a sharp drop in electrical resistivity (p), due to the transition from an insulator to a metal. The MI transition temperatures observed both in p(T_p) and S(T_s) for the VO_2 films systematically decrease with lattice shrinkage in the pseudorutile structure along the c axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset T_s, where the insulating phase starts to become metallic, is much lower than the onset T_p. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in p measurements. Consequently, S measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO_2.
机译：通过热功率测量研究了具有受控晶格畸变的二氧化钒（VO_2）薄膜中绝缘体到金属（MI）的相变。在（0001）α-Al_2O_3，（112-bar0）α-Al_2O_3和（001）TiO_2衬底上生长的具有不同晶体取向的VO_2外延膜表现出塞贝克系数（S）的绝对值从约200降低到23 μVK〜（-1），以及由于从绝缘体到金属的转变而导致的电阻率（p）急剧下降。 VO_2薄膜在p（T_p）和S（T_s）中观察到的MI转变温度随着伪c-金红石结构沿c轴的晶格收缩而系统降低，并伴随着MI转变温度宽度的扩大。此外，绝缘相开始变成金属的起始T_s远低于起始T_p。这种差异归因于S对大多数绝缘相中隐藏的金属畴的检测灵敏度，这在p次测量中无法检测到。因此，S测量为深入了解VO_2中的MI过渡过程提供了一种直接而出色的方法。

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  • 来源
    《Physical review》 |2015年第3期|035302.1-035302.7|共7页
  • 作者

    Takayoshi Katase; Kenji Endo; Hiromichi Ohta;

  • 作者单位

    Research Institute for Electronic Science, Hokkaido University, N20W10, Sapporo 001-0020, Japan;

    Research Institute for Electronic Science, Hokkaido University, N20W10, Sapporo 001-0020, Japan;

    Research Institute for Electronic Science, Hokkaido University, N20W10, Sapporo 001-0020, Japan;

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  • 正文语种 eng
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  • 关键词

    metal-insulator transitions and other electronic transitions;

    机译：金属绝缘体过渡和其他电子过渡;

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