Rashba effect in single-layer antimony telluroiodide SbTeI

著录项

• 来源
  《Physical review》 |2015年第11期|115302.1-115302.5|共5页
• 作者

  Houlong L. Zhuang; Valentino R. Cooper; Haixuan Xu; P. Ganesh; Richard G. Hennig; P. R. C. Kent;

  展开▼
• 作者单位

  Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Bethel Valley Road, Oak Ridge, Tennessee 37831, USA;

  Materials Science and Technology Division, Oak Ridge National Laboratory, Bethel Valley Road, Oak Ridge, Tennessee 37831, USA;

  Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, USA;

  Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Bethel Valley Road, Oak Ridge, Tennessee 37831, USA;

  Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

  Computer Science and Mathematics Division, Oak Ridge National Laboratory, Bethel Valley Road, Oak Ridge, Tennessee 37831, USA, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Bethel Valley Road, Oak Ridge, Tennessee 37831, USA;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (restricted to new topics in section 73); semiconductor compounds; surface states, band structure, electron density of states;

  机译：表面;界面;薄膜和低维结构的电子结构和电性能的其他主题（仅限于第73节中的新主题）;半导体化合物表面态;能带结构;态电子密度;