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机译:直径小于3 nm的铜纳米线的电子传输特性
Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland;
Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland;
Intel Corporation, Hillsboro, Oregon 97124, USA;
Intel Corporation, Hillsboro, Oregon 97124, USA;
Intel Ireland, Collinstown, Leixlip, Co. Kildare, Ireland;
Intel Corporation, Hillsboro, Oregon 97124, USA;
Tyndall National Institute, University College Cork, Dyke Parade, Cork, Ireland;
electron scattering from surfaces; ballistic transport; metallization, contacts, interconnects; device isolation;
机译:CDSE纳米线的直径依赖电子,光学和传输性能:AB-Initio研究
机译:应变和直径对砷化铟纳米线电子和电荷传输性能的影响
机译:Au-催化剂/ Ge-纳米线肖特基二极管的直径依赖性电子输运性质
机译:单轴拉伸应变下Si纳米线MOSFET散射受限传输特性的直径依赖性
机译:纤锌矿型氮化铝(W-AlN)的电子和输运性质的计算,以及多壁碳纳米管(外径20-30纳米)-环氧树脂复合材料的微波吸收性能。
机译:不同直径的SnSe纳米线的热电性能
机译:直径小于3 nm的铜纳米线的电子传输特性
机译:铜氧化物的电子传输性质。