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Excitonic fine structure splitting in type-Ⅱ quantum dots

机译：Ⅱ型量子点的激子精细结构分裂

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摘要

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-Ⅱ confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-Ⅰ confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.
机译：量子点中的激子精细结构分裂与波函数的横向形状密切相关。我们从理论上研究了由GaAsSb覆盖层施加的Ⅱ型限制的InAs量子点中的精细结构分裂。我们表明，尽管具有结构伸长和压电场，对于现实的量子点，仍可实现与激子跃迁的自然线宽相当的极小结构分裂值。例如，改变覆盖层的厚度允许微调分裂能量。通过对空穴波函数对量子点结构的强烈敏感性以及对电子和空穴各向异性的相互补偿来解释这种效果。在研究的量子点中，激子跃迁的振子强度与具有Ⅰ型限制的量子点相当，这使得这些点对于量子通信技术来说是有吸引力的，因为它是偏振纠缠光子对的发射体。

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  • 来源
    《Physical review》 |2015年第19期|195430.1-195430.9|共9页
  • 作者

    V. Krapek; P. Klenovsky; T. Sikola;

  • 作者单位

    Central European Institute of Technology, Brno University of Technology, Technicka 10, 616 00 Brno, Czech Republic;

    Institute of Condensed Matter Physics, Masaryk University, Kotlarska 2, 611 37 Brno, Czech Republic Central European Institute of Technology, Masaryk University, Kamenice 753, 625 00 Brno, Czech Republic;

    Central European Institute of Technology, Brno University of Technology, Technicka 10, 616 00 Brno, Czech Republic Institute of Physical Engineering, Brno University of Technology, Technicka 2, 616 69 Brno, Czech Republic;

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  • 正文语种 eng
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  • 关键词

    excitons and related phenomena; quantum dots; Ⅲ-Ⅴ semiconductors;

    机译：激子和相关现象;量子点;Ⅲ-Ⅴ族半导体;

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