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Tunable magnetic interaction in hydrogenated epitaxial graphene modulated by the SiC substrate

机译:SiC衬底调制的氢化外延石墨烯中的可调磁相互作用

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摘要

We show that the d~0 ferromagnetism with high Curie temperature (T_c) can be achieved in the electron-doped hydrogenated epitaxial graphene on certain SiC substrates through first-principles calculations. The pristine systems are found to be Mott insulators regardless of SiC polytype (2H, 4H, or 6H) which, however, plays a significant role in the modulation of magnetic interaction. Carrier doping enhances the ferromagnetic coupling due to the double-exchange mechanism and thus realizes the phase transition from antiferromagnetism to ferromagnetism. A T_c of around 400 K is predicted for graphene on the 2H-SiC substrate. We employ a nondegenerate Hubbard model to demonstrate how the SiC affects the interfacial magnetism in intra-atomic Coulomb repulsion and intersite hopping interactions.
机译:我们证明,通过第一性原理计算,可以在某些SiC衬底上的电子掺杂氢化外延石墨烯中获得具有居里温度(d_c)的d〜0铁磁性。发现原始系统是Mott绝缘体,而与SiC多型(2H,4H或6H)无关,但是它在磁相互作用的调制中起着重要作用。载流子掺杂由于双重交换机制而增强了铁磁耦合,从而实现了从反铁磁性到铁磁性的相变。预测2H-SiC衬底上的石墨烯的T_c约为400K。我们采用非简并的Hubbard模型来证明SiC如何影响原子内库仑排斥和位点间跳跃相互作用中的界面磁性。

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  • 来源
    《Physical review》 |2015年第20期|205433.1-205433.5|共5页
  • 作者单位

    Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China,Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, People's Republic of China;

    National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China;

    Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China,Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, People's Republic of China,Institute for Advanced Study, Tsinghua University, Beijing 100084, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    magnetic properties of thin films, surfaces, and interfaces; electron states at surfaces and interfaces; magnetic semiconductors;

    机译:薄膜;表面和界面的磁性能;表面和界面的电子态;磁性半导体;

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