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机译:SiC衬底调制的氢化外延石墨烯中的可调磁相互作用
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China,Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, People's Republic of China;
National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China;
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China,Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, People's Republic of China,Institute for Advanced Study, Tsinghua University, Beijing 100084, People's Republic of China;
magnetic properties of thin films, surfaces, and interfaces; electron states at surfaces and interfaces; magnetic semiconductors;
机译:石墨烯-底物相互作用对石墨烯上有机分子构型的影响:并五苯/外延石墨烯/ SiC
机译:SiC(0001)衬底上外延石墨烯上的细胞相互作用
机译:在4H-SiC上生长的氢化外延石墨烯的结构研究(0001)
机译:SiC(0001)衬底上外延石墨烯上的细胞相互作用
机译:欧姆金属和氧化物沉积对碳化硅衬底上多层外延石墨烯的结构和电性能的影响。
机译:乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
机译:石墨烯 - 基底相互作用对构型的影响 石墨烯上的有机分子:并五苯/外延石墨烯/ siC