Electron-hole compensation effect between topologically trivial electrons and nontrivial holes in NbAs

著录项

• 来源
  《Physical review》 |2015年第20期|205134.1-205134.8|共8页
• 作者

  Yongkang Luo; N. J. Ghimire; M. Wartenbe; Hongchul Choi; M. Neupane; R. D. McDonald; E. D. Bauer; Jianxin Zhu; J. D. Thompson; F. Ronning;

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• 作者单位

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

  Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  magnetotransport phenomena; materials for magnetotransport; landau levels; surface states, band structure, electron density of states; phases: geometric; dynamic or topological;

  机译：磁传输现象;磁运输材料;兰道水平;表面态;能带结构;态电子密度;阶段：几何;动态或拓扑;