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Tuning the electronic structure of monolayer graphene/MoS_2 van der Waals heterostructures via interlayer twist

机译:通过层间扭曲调节单层石墨烯/ MoS_2范德华异质结构的电子结构

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We directly measure the electronic structure of twisted graphene/MoS_2 van der Waals heterostructures, in which both graphene and MoS_2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS_2, the resulting band structure reveals the absence of hybridization between the graphene and MoS_2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains essentially intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS_2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at Γ and K of the MoS_2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS_2 within the heterostructure becomes predominantly an indirect band-gap system for all twist angles except in the proximity of 30°. This result enables potential band-gap engineering in van der Waals heterostructures comprised of monolayer structures.
机译:我们直接测量扭曲的石墨烯/ MoS_2范德华异质结构的电子结构,其中石墨烯和MoS_2均为单层。我们使用阴极透镜显微镜和微探针角分辨光发射光谱法测量表面图像,确定扭曲角并绘制这些人工异质结构的电子结构。对于单层MoS_2上的单层石墨烯,所得的能带结构显示出石墨烯与MoS_2电子态之间不存在杂化。此外,不管两种材料之间的扭转角如何,异质结构中源自石墨烯的电子结构都基本保持完整。然而,相反,发现与MoS_2层相关的电子结构是扭曲角相关的;因此,与MoS_2层相关联的电子结构是不可逆的。特别地,在MoS_2层的Γ和K处的价带最大能量的相对差在大约0到0.2eV之间变化。我们的研究结果表明,异质结构中的单层MoS_2主要成为所有扭转角(除了30°附近)的间接带隙系统。该结果使得能够在由单层结构组成的范德华异质结构中进行潜在的带隙工程。

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