...
机译:层间耦合引起的弱拓扑绝缘子:Bi_2TeI堆积的第一性原理研究
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China;
Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany,Max Planck Institute for the Physics of Complex Systems, D-01187 Dresden, Germany;
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China;
Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany;
Max Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany;
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China,Institute for Advanced Study, Tsinghua University, Beijing 100084, China;
density functional theory, local density approximation, gradient and other corrections; electron density of states and band structure of crystalline solids;
机译:van der WaaS反铁磁拓扑绝缘体,具有弱层间磁耦合
机译:APS -APS 2017年3月会议-活动-拓扑绝缘子/亚铁磁绝缘子异质结构中层间交换耦合的铁磁共振研究
机译:拓扑结晶绝缘子SNE中的压力诱导的相变及其与半导体SNSE的比较:拉曼和第一原理研究
机译:具有弱层间耦合的堆叠三角形晶格反霉菌的Neel温度和子变差磁化
机译:弱反铁物磁性和拓扑材料的第一原理研究
机译:减少的氧化石墨烯间隔层与弱的层间耦合制造堆叠式MoS2双层薄膜
机译:层间耦合诱导的弱拓扑绝缘体:堆叠Bi 2 sub> TeI的第一性原理研究