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Creating in-plane pseudomagnetic fields in excess of 1000 T by misoriented stacking in a graphene bilayer

机译:通过在石墨烯双层中错位堆叠来创建超过1000 T的面内伪磁场

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摘要

It is well established that some kinds of lattice deformations in graphene monolayer, which change electron hopping in the sublattice and affect in-plane motion of electrons, may induce out-of-plane pseudomagnetic fields as large as 100 T. Here, we demonstrate that stacking misorientation in graphene bilayers mimics the effect of huge in-plane pseudomagnetic fields greater than 1000 T on the interlayer hopping of electrons. As well as addressing the similarity between the effect of in-plane pseudomagnetic fields and the twisting on the electronic band structure of the Bernal graphene bilayer, we point out that the in-plane magnetic fields (or twisting) could modify the low-energy pseudospin texture of the graphene bilayer (the pseudospin winding number is reduced from 2 to 1), thereby changing the chiralities of quasiparticles from those of spin 1 to those of spin 1/2. Our results illustrate the possibility of controllably manipulating electronic properties of Bernal graphene bilayer by introducing the in-plane magnetic field or twisting.
机译:众所周知,石墨烯单层中的某些晶格变形会改变亚晶格中的电子跳跃并影响电子的面内运动,可能会感应出最大100 T的面外伪磁场。在这里,我们证明了石墨烯双层中的堆叠取向错误模拟了大于1000 T的巨大面内伪磁场对电子层间跳跃的影响。除了解决平面内伪磁场的影响和扭曲对贝尔纳石墨烯双层电子能带结构的相似性外,我们指出,平面内磁场(或扭曲)可以改变低能假旋转石墨烯双层的结构(伪自旋绕组数从2减少到1),从而将准粒子的手性从自旋1的手性更改为自旋1/2的手性。我们的结果说明了通过引入面内磁场或扭曲可控制地控制Bernal石墨烯双层电子性能的可能性。

著录项

  • 来源
    《Physical review》 |2014年第12期|125418.1-125418.7|共7页
  • 作者单位

    Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China;

    Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China;

    Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China;

    Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    multilayers; quantum hall effects; high-field and nonlinear effects;

    机译:多层量子霍尔效应高场和非线性效应;

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