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机译:自旋轨道耦合和Hubbard U对IrO_2电子结构的影响
Centre for Advanced Materials, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India;
Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India;
Department of Materials and Nanophysics, School of Information and Communication Technology, Electrum 229, Royal Institute of Technology (KTH), SE-16440 Kista, Sweden,SeRC (Swedish e-Science Research Center), KTH, SE-10044 Stockholm, Sweden,Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden;
Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden;
Centre for Advanced Materials, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India,Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India;
electron density of states and band structure of crystalline solids; metal-insulator transitions and other electronic transitions;
机译:金属金红石型IrO_2三维电子结构中的强自旋轨道耦合和Dirac结线
机译:金属金红石IRO_2三维电子结构中强大的旋转轨道耦合和DIDAC Nodal线路
机译:自旋轨道耦合引起的外延IrO_2薄膜的能带结构变化和轨道特性
机译:旋转轨道耦合对单层WS2电子和激发器结构的影响
机译:具有电子设备应用的低维半导体材料中旋转轨道耦合和轨道特征的电子结构及其影响
机译:AU 4F核心级电子结构中的旋转轨道耦合效应在支撑的低维金纳米粒子中
机译:旋转轨道耦合和Hubbard $ U $对电子设备的影响 IrO $ _2 $的结构