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Control of the ionization state of three single donor atoms in silicon

机译:控制硅中三个单给体原子的电离态

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摘要

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control voltages at which the ionization takes place. It allows us to observe the three doubly occupied states As~- at strong electric field in the presence of nearby source-drain electrodes.
机译:通过改变绝缘体上短硅三栅场效应晶体管中的前栅电压和衬底电压,我们可以控制三个砷供体的电离状态。我们在三维静电模拟和电离发生的控制电压实验之间获得了良好的定量一致性。它使我们能够在强电场下在附近存在源漏电极的情况下观察三个双重占据状态As〜-。

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