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首页> 外文期刊>Physical review >Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers
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Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers

机译：生长和退火的Ta / CoFeB / MgO层中的类似场和抗阻尼的自旋轨道扭矩

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摘要

We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 ℃ and characterized using x-ray-absorption spectroscopy, transmission electron microscopy, resistivity, and Hall effect measurements. By performing adiabatic harmonic Hall voltage measurements, we show that the transverse (fieldlike) and longitudinal (antidampinglike) spin-orbit torques are composed of constant and magnetization-dependent contributions, both of which vary strongly with annealing. Such variations correlate with changes of the saturation magnetization and magnetic anisotropy and are assigned to chemical and structural modifications of the layers. The relative variation of the constant and anisotropic torque terms as a function of annealing temperature is opposite for the fieldlike and antidamping torques. Measurements of the switching probability using sub-μs current pulses show that the critical current increases with the magnetic anisotropy of the layers, whereas the switching efficiency, measured as the ratio of magnetic anisotropy energy and pulse energy, decreases. The optimal annealing temperature to achieve maximum magnetic anisotropy, saturation magnetization, and switching efficiency is determined to be between 240 and 270 ℃.
机译：我们目前对垂直磁化的Ta / CoFeB / MgO层中电流感应的自旋轨道扭矩进行全面研究。将样品分步退火至300℃，并使用X射线吸收光谱，透射电子显微镜，电阻率和霍尔效应测量进行表征。通过进行绝热谐波霍尔电压测量，我们显示出横向（磁场）和纵向（反阻尼）自旋轨道转矩由恒定和磁化相关的贡献组成，这两者都随着退火而变化很大。这种变化与饱和磁化强度和磁各向异性的变化相关，并且被分配给层的化学和结构修改。恒定和各向异性转矩项相对于退火温度的相对变化对于场转矩和抗阻尼转矩而言是相反的。使用亚微秒电流脉冲对开关概率的测量表明，临界电流随层的磁各向异性而增加，而随着磁各向异性能量与脉冲能量之比的变化，开关效率降低。达到最大磁各向异性，饱和磁化强度和开关效率的最佳退火温度确定为240到270℃。

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  • 来源
    《Physical review》 |2014年第21期|214419.1-214419.13|共13页
  • 作者

    Can Onur Avci; Kevin Garello; Corneliu Nistor; Sylvie Godey; Belen Ballesteros; Aitor Mugarza; Alessandro Barla; Manuel Valvidares; Eric Pellegrin; Abhijit Ghosh; Ioan Mihai Miron; Olivier Boulle; Stephane Auffret; Gilles Gaudin; Pietro Gambardella;

  • 作者单位

    Department of Materials, ETH Zurich, Hoenggerbergring 64, CH-8093 Zuerich, Switzerland,Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

    Department of Materials, ETH Zurich, Hoenggerbergring 64, CH-8093 Zuerich, Switzerland,Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

    Department of Materials, ETH Zurich, Hoenggerbergring 64, CH-8093 Zuerich, Switzerland,Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

    Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

    Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

    Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

    Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), 5.5. 14 Km 163.5,I-34149 Trieste, Italy;

    ALBA Synchrotron Light Source, E-08290 Cerdanyola del Valles, Barcelona, Spain;

    ALBA Synchrotron Light Source, E-08290 Cerdanyola del Valles, Barcelona, Spain;

    Department of Materials, ETH Zurich, Hoenggerbergring 64, CH-8093 Zuerich, Switzerland;

    SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France;

    SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France;

    SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France;

    SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France;

    Department of Materials, ETH Zurich, Hoenggerbergring 64, CH-8093 Zuerich, Switzerland,Catalan Institute of Nanoscience and Nanotechnology (ICN2), UAB Campus, E-08193 Barcelona, Spain;

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  • 正文语种 eng
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  • 关键词

    spin polarized transport; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

    机译：自旋极化传输;磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;

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