Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

A. R. Goni; F. Kaess; J. S. Reparaz; M. I. Alonso; M. Garriga; G. Callsen; M. R. Wagner; A. Hoffmann; Z. Sitar

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Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

机译：纤锌矿型ZnO，GaN和AlN的折射率对压力的依赖性

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We have measured both the ordinary and extraordinary refractive index of m-plane cuts of wurtzite ZnO, GaN, and AlN single crystals at room temperature and as a function of hydrostatic pressure up to 8 Gpa. For that purpose we have developed an alternative optical interference method, called bisected-beam method, which leads in general, to high contrast interference fringes. Its main feature, however, is to be particularly suitable for high pressure experiments with the diamond anvil cell, when the refractive index of the sample is low and similar to that of diamond and/or the pressure transmitting medium, as is the case here. For all three wide-gap materials we observe a monotonous decrease of the ordinary and extraordinary refractive indices with increasing pressure, being most pronounced for GaN, less marked for ZnO, and the smallest for AlN. The frequency dependence of the refractive indices was extrapolated to zero energy using a critical-point-plus-Lorentz-oscillator model of the ordinary and extraordinary dielectric function. In this way, we determined the variation with pressure of the electronic part (no-phonon contribution) of the static dielectric constant ε_∞. Its volume derivative, r = d ln ε_∞/d ln V, serves as single scaling coefficient for comparison with experimental and/or theoretical results for other semiconductors, regarding the pressure effects on the dielectric properties. We have obtained an ordinary/extraordinary average value r of 0.49(15) for ZnO, 1.22(9) for GaN, and 0.32(4) for A1N. With the values for the ordinary and extraordinary case being within experimental uncertainty, there is thus no apparent change in dielectric anisotropy under pressure for these wurtzite semiconductors. Results are discussed in terms of the pressure-dependent electronic band structure of the materials.

机译：我们已经测量了室温下纤锌矿型ZnO，GaN和AlN单晶的m平面切口的寻常折射率和非寻常折射率，它们是高达8 Gpa的静水压力的函数。为此，我们开发了另一种光学干涉方法，称为二等分光束法，通常会导致高对比度干涉条纹。然而，当样品的折射率低并且类似于金刚石和/或压力传递介质的折射率时，其主要特征是特别适用于使用金刚石砧室的高压实验，如此处的情况。对于所有三种宽间隙材料，我们观察到常压和非寻常折射率随压力的增加而单调降低，其中GaN最明显，ZnO标记较少，而AlN最小。使用常规和非常规介电函数的临界点加洛伦兹振荡器模型，将折射率的频率依赖性外推到零能量。这样，我们确定了静态介电常数ε_∞随电子部件的压力变化（无声子贡献）。它的体积导数r = d lnε_∞/ d ln V，可作为单个比例系数，用于与其他半导体的实验和/或理论结果进行比较，以了解压力对介电性能的影响。对于ZnO，我们获得的普通/非常好平均值r为0.49（15），对于GaN为1.22（9），对于AlN为0.32（4）。由于通常情况和非常规情况的值都在实验不确定性范围内，因此这些纤锌矿半导体在压力下的介电各向异性没有明显变化。根据材料的压力相关电子能带结构讨论了结果。

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来源
《Physical review》 |2014年第4期|045208.1-045208.11|共11页
作者
A. R. Goni; F. Kaess; J. S. Reparaz; M. I. Alonso; M. Garriga; G. Callsen; M. R. Wagner; A. Hoffmann; Z. Sitar;
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作者单位

ICREA, Passeig Lluis Companys 23, E-08010 Barcelona, Spain,Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Esfera UAB, E-08193 Bellaterra, Spain;

Institut fuer Festkoerperphysik, EW 5-1, Technische Universitaet Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany;

Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Esfera UAB, E-08193 Bellaterra, Spain,Catalan Institute of Nanotechnology, Campus UAB, E-08193 Bellaterra, Spain;

Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Esfera UAB, E-08193 Bellaterra, Spain;

Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Esfera UAB, E-08193 Bellaterra, Spain;

Institut fuer Festkoerperphysik, EW 5-1, Technische Universitaet Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany;

Institut fuer Festkoerperphysik, EW 5-1, Technische Universitaet Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany,Catalan Institute of Nanotechnology, Campus UAB, E-08193 Bellaterra, Spain;

Institut fuer Festkoerperphysik, EW 5-1, Technische Universitaet Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany;

Dept. of Materials Science and Engineering, North Carolina State Universite, Raleigh, North Carolina 27695-7919, USA;

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optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); theory, models, and numerical simulation;

机译：光学常数（包括折射率;复介电常数;吸收率;反射和透射系数;发射率）;理论;模型和数值模拟;

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1. Dependence of the Structure, Optical Phonon Modes and Dielectric Properties on Pressure in Wurtzite GaN and AlN [J] . Huanyou Wang, Yaqi Chen, Yalan Li, Advances in Materials Physics and Chemistry . 2015,第8期

机译：纤锌矿型GaN和AlN中结构，光学声子模和介电特性对压力的依赖性
2. Dependence of the structure, optical phonon modes and dielectric properties on pressure in wurtzite GaN and AlN [J] . Wang H., Xie Y., Li Y., Journal of optoelectronics and advanced materials . 2015,第9a10期

机译：纤锌矿GaN和AlN中结构，光子模式和介电特性对压力的依赖性
3. Comparison of wurtzite GaN/AlN and ZnO/MgO short-period superlattices: Calculation of band gaps and built-in electric field [J] . Gorczyca I., Teisseyre H., Suski T., Physica status solidi, B. Basic research . 2017,第8期

机译：Wurtzite GaN / Aln和Zno / MgO短期超晶格的比较：带隙和内置电场的计算
4. The electronic properties of zinc-blende GaN, wurtzite GaN and pnma-GaN crystals under pressure [C] . Luan Xing-He, Feng Chuang, Qin Hong-Bo, International Conference on Electronic Packaging Technology . 2017

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5. Quantification and Control of Inhomogeneity in Wurtzite (GaN) 1-x(ZnO)x Semiconductors for Visible Light Absorption. [D] . Reinert, Alexandra Audrey. 2014

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6. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy [O] . Ling Sang, Qin Sheng Zhu, Shao Yan Yang, 2014

机译：X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
7. Dependence of the Structure, Optical Phonon Modes and Dielectric Properties on Pressure in Wurtzite GaN and AlN [O] . Huanyou Wang, Yaqi Chen, Yalan Li, 2015

机译：结构，光学声子模式和介电性能对紫立岩GaN和AlN的压力

Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

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