...
首页> 外文期刊>Physical review >Photocontrol of Dirac electrons in a bulk Rashba semiconductor
【24h】

Photocontrol of Dirac electrons in a bulk Rashba semiconductor

机译:Rashba体半导体中Dirac电子的光控

获取原文
获取原文并翻译 | 示例
           

摘要

We demonstrate the generation of circularly polarized light induced current of bulk Dirac electrons at room temperature by exploiting a giant Rashba effect in a bulk semiconductor. The photocurrent is spin polarized due to the Spin-momentum locking of the electronic states, which is manifested by a sign reversal upon flipping either the photon helicity or the sign of the Rashba parameter, without any stray current. The action spectra revealed the photon energy range, where the photocurrent is carried by the Dirac electrons at the inner Fermi surface. This photogalvanic control is enabled by the sizable spin splittings both at the valence and conduction bands with the same helicity, and also by a number of optical transition pathways compared to those in the two-dimensional Rashba systems. An efficient coupling between the photon field and large spin-orbit interaction is accordingly proposed to allow the universal control of Dirac electrons.
机译:我们通过在体半导体中利用巨大的Rashba效应来证明在室温下体Dirac电子的圆偏振光感应电流的产生。由于电子状态的自旋动量锁定,光电流自旋极化,这通过翻转光子螺旋度或Rashba参数的符号时的符号反转来体现,而没有任何杂散电流。作用谱揭示了光子能量范围,其中光电流由内费米表面的狄拉克电子携带。通过在具有相同螺旋度的价带和导带处进行相当大的自旋分裂,以及通过与二维Rashba系统中的光学跃迁路径相比,可以实现这种光电流控制。因此,提出了光子场与大自旋轨道相互作用之间的有效耦合,以实现对狄拉克电子的普遍控制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号